The pin device has important potential applications in rectification and detection.To enhance the volt-ampere and photoelectrical detection characteristics of the device,a novel p-Si/i-Al2O3-Al-doped-Al2O3 (AZO) structure is proposed.In the experiment,the volt-ampere and photoelectrical detection characteristics are investigated.Compared with the conventional pn device,the rectification ratio of 152 under the dark conditions is achieved.By controlling the deposited thickness of i-layer,the tunneling effect is effectively suppressed.The sensitivity of detection is greatly improved.The device presents better characteristics comparing to the traditional device.%pin器件在整流和探测领域都有着重要的潜在应用价值.为了提高器件伏安和光电探测性能,提出了一种新型的p-硅/i-氧化铝-掺铝氧化锌(AZO)结构器件,并利用原子层沉积技术(ALD)在低温下实现了器件制备.分析了器件的伏安特性,结果显示相比传统的pn结构器件,新结构在无光条件下实现了152的整流比.通过增加i层的沉积厚度,可以有效抑制遂穿效应,减小暗电流,提高光电检测的灵敏度,实现了比传统材料更高的光生电流灵敏度.
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