与传统的硅(Si)功率器件相比,碳化硅(SiC)功率器件具有击穿电场强度高、导热率高、开关频率高、通态电阻低等优点.将SiC功率器件引入交错并联Boost功率因数校正(PFC)电路,分析了临界导通模式(BCM)下电路的工作特性,给出了主电路元器件的设计方法及设计过程,搭建了以UCC28061为控制芯片的实验电路与测试平台.测试结果表明,在达到PFC的目的、降低电流纹波的同时,在数百千赫兹工作频率下,SiC MOSFET比Si MOSFET具有更低的结温,对提升系统的工作效率、降低损耗及装置的体积,具有积极的意义.%Power devices based on silicon carbide(SiC) have been paid more and more attention due to their superior performance compared to conventional silicon(Si) counterparts.Operation characteristic of interleaved boundary conduction mode (BCM) Boost power factor correction is analyzed and design method of main circuit component is presented.UCC28061 is used as the controller for the Boost power factor correct(PFC) converter based full-SiC devices,then experiment circuit and testing platform are built up.Test results show that power factor is well corrected and the output voltage reaches our requirement.Also,the current ripple is within the reasonable range.Due to the superior performance of SiC MOSFET and SiC SBD,the developed PFC converter is able to operate at high frequency up to hundreds of kilohertz,and shows lower junction temperature compared to full-Si devices,which is benefit to improve the efficiency and lower the loss of power electronic equipment.
展开▼
