Power loss must be concerned especially in actural projects, which has impact on the efficiency of the voltage source converter. A polynomial loss model was established based on characteristic curve provided by insulated gate bipolar transistor(IGBT) manufacturers by using polynomial curve fitting approach. Loss calculation program was projected in LabVIEW. Power losses of the voltage source converter were analyzed and calculated under sinusoidal pulse width modulation, third harmonic injection pulse width modulation and line voltage controlled pulse width modulation. The variation of power dissipation was analyzed following power factor and modulation index,which supplied foundation for parameter selection and thermal design.%功率损耗影响电压源换流器的效率,是实际工程应用中必须关注的一个问题.采用多项式方法拟合绝缘栅双极晶体管IGBT(insulated gate bipolar transisitor)厂商提供的特性曲线,建立多项式损耗模型,给出了适用性强的IGBT模块损耗计算方法.在LabVIEW下编写了损耗计算程序,对两电平电压源换流器在正弦脉宽调制、三次谐波注放脉宽调制和线电压控制的脉宽调制三种调制方式下的损耗进行了分析计算,并分析了功率因数和调制度变化对损耗的影响,为器件参数选择和热设计提供了依据.
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