Since the successful isolation of the single atomic layer of graphite in 2004, graphene has drawn great interests due to its unique properties, including high mechanical strength, outstanding conductivity, high coefficient of thermal conductivity, etc. It is significant to manufacture largescale and highquality graphene on various substrates for the study of the characteristics of graphene and the research of the nanodevices basing on graphene. This paper selectively reviews recent experiment advances in graphene made on different substrates, SiC, SiO2, Cu, Ni, Co, Ru, for instance. Nowadays, we can obtain large area of high quality graphene by using different methods, such as CVD, epitaxial growth, mechanical separation, etc. We can manufacture graphene on nonmetals including SiC, GaAs, SiO2, and metals covering Cu, Ni, Co, Ru, Au, Ag, etc. This article especially reviews the interaction between the graphene and the substrates. The mechanism of interaction is closely related to the mismatch of the lattice, weakness of the bonds, the transformation of the electrons between the few layer graphene and substrates. Also, the interaction between them has great influences on geometry, energy band, and coefficient of thermal conductivity, phonon dispersion, optical waveguide performances and the properties of electrons of the graphene. The combination of the experiment and the calculation （such as density functional theory, tight-binding method, molecular dynamics simulation, etc. ） can make a deeper understanding of the mechanism of the effects between graphene and different substrates, which can be served as a guide for further study.%大面积高质量石墨烯的制备对石墨烯电子特性及石墨烯基纳器件相关研究有重要意义。本文综述了近几年来衬底上制备石墨烯的相关实验以及衬底与石墨烯相互作用研究的重要进展。目前，采用化学气相沉积、外延生长等方法可在衬底表面上制备出较大面积、高质量的石墨烯材料。衬底与石墨烯相互作用和界面间晶格匹配、原子成键及电荷转移等密切相关，其对吸附石墨烯的几何结构、能带结构及电子特性等产生明显影响。实验与理论计算的结合可望加深衬底与石墨烯作用机理的理解，指导衬底上石墨烯制备及改性的进一步研究。
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