In order to research on the synthesis mechanism and growth mechanism of the boron-doped diamond, the boron-doped diamond monocrystal synthesised from the HPHT Fe-Ni-C-B Series and its surrounded metallic film have been systematically analysed through modern materials analysis technology.The result shows that the boron element added into the metal catalyzer has been dissolved into the surrounded metallic film as a metal-carbon-boron compound.Being as the direct carbon/boron source for the growth of the boron-doped diamond,it was catalysed by intermetallic phase and the acti-vated carbon/boron atoms were extracted and spreaded onto the surface of the growing di-amond monocrystal to promote the growth of the diamond.The boron-doped diamond grow in a layered growth model.The source for this type of growth during the early stage comes from two dimensional crystal nucleus and from dislocation during the late stage.The activated carbon/boron atoms spread onto the surface of the diamond monocrystal and are absorbed at the front end of the growth step and then transformed into part of the diamond monocrystal.As the step continues to expand,new growth step continues to de-velop on the newly grown crystal surface while the boron-doped diamond monocrystal grows in a layered stack-based pattern.%采用现代材料分析测试方法，通过对高温高压 Fe-Ni-C-B 系合成出的含硼金刚石单晶及其金属包覆膜进行系统分析和表征，探寻含硼金刚石合成机理及生长机制。研究发现，添加在金属触媒中的硼以金属-碳-硼化合物的形式溶入金属包覆膜，作为含硼金刚石生长的直接碳/硼源，经金属中间相的催化，析出活性碳/硼原子(团)扩散至正在生长的金刚石单晶表面，促进金刚石的生长。而含硼金刚石则以一种层状生长的方式长大，这种层状生长的台阶来源前期以二维晶核为主，后期则以位错为主。活性碳/硼原子(团)扩散到达金刚石单晶表面，在生长台阶的前端被吸附，转变成为金刚石单晶的一部分。随着台阶的不断扩展，新的生长台阶在刚长成的晶面上继续形成，含硼金刚石单晶则以层状堆叠的方式完成长大过程。
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