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首页> 美国卫生研究院文献>Materials >The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100)
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The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100)

机译：退火温度对Si（100）上电沉积Ge的熔融生长获得的SixGe1-x的成分和应变的影响

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摘要

The effects of annealing temperatures on composition and strain in SixGe1−x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100°C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at ~00 cm−1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of SixGe1−x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance.
机译：研究了退火温度对Si（100）衬底上电沉积Ge的快速熔融生长获得的SixGe1-x中成分和应变的影响。在此，在1000、1050和1100℃的温度下进行快速熔化过程1秒。所有退火的样品在（100）方向上显示单晶结构。在〜00 cm -1 处出现明显的Si-Ge振动模态峰，这证实了由于Si向Ge区域外扩散导致Si-Ge混合的存在。在快速熔化过程中，Ge熔化并在短时间内达到热平衡。一旦与熔融的Ge接触，Ge / Si界面处的Si就开始溶解，从而产生Si-Ge混合。通过考虑Ge-Ge和Si-Ge振动模式峰的强度比来计算Si-Ge混合中的Si分数，发现其随退火温度增加。可以发现，随着退火温度的升高，应变从拉伸变为压缩。 SixGe1-x的取决于Si分数的热膨胀系数是产生这种应变行为的可能原因。在Ge / Si异质结构中，了解成分和应变特性非常重要，因为这些特性似乎对器件性能产生重大影响。

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