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首页> 美国卫生研究院文献>Materials >The Effect of Cu:Ag Atomic Ratio on the Properties of Sputtered Cu–Ag Alloy Thin Films
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The Effect of Cu:Ag Atomic Ratio on the Properties of Sputtered Cu–Ag Alloy Thin Films

机译：Cu：Ag原子比对溅射Cu-Ag合金薄膜性能的影响

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摘要

Cu–Ag thin films with various atomic ratios were prepared using a co-sputtering technique, followed by rapid thermal annealing at various temperatures. The films’ structural, mechanical, and electrical properties were then characterized using X-ray diffractometry (XRD), atomic force microscopy (AFM), FESEM, nano-indentation, and TEM as functions of compositions and annealing conditions. In the as-deposited condition, the structure of these films transformed from a one-phase to a dual-phase state, and the resistivity shows a twin-peak pattern, which can be explained in part by Nordheim’s Rule and the miscibility gap of Cu–Ag alloy. After being annealed, the films’ resistivity followed the mixture rule in general, mainly due to the formation of a dual-phase structure containing Ag-rich and Cu-rich phases. The surface morphology and structure also varied as compositions and annealing conditions changed. The recrystallization of these films varied depending on Ag–Cu compositions. The annealed films composed of 40 at % to 60 at % Cu had higher hardness and lower roughness than those with other compositions. Particularly, the Cu50Ag50 film had the highest hardness after being annealed. From the dissolution testing, it was found that the Cu-ion concentration was about 40 times higher than that of Ag. The galvanic effect and over-saturated state could be the cause of the accelerated Cu dissolution and the reduced dissolution of the Ag.
机译：使用共溅射技术制备了具有不同原子比的Cu-Ag薄膜，然后在不同温度下进行快速热退火。然后使用X射线衍射仪（XRD），原子力显微镜（AFM），FESEM，纳米压痕和TEM对薄膜的结构，机械和电性能进行了表征，这些成分是成分和退火条件的函数。在沉积状态下，这些膜的结构从单相状态转变为双相状态，并且电阻率显示出双峰模式，这可以部分由诺德海姆定律和铜的混溶性间隙来解释。 –Ag合金。退火后，薄膜的电阻率通常遵循混合规则，这主要是由于形成了富含银和富含铜的双相结构。表面形态和结构也随着组成和退火条件的变化而变化。这些薄膜的重结晶取决于Ag-Cu的组成。与其他组成相比，由40at％至60at％Cu组成的退火膜具有更高的硬度和更低的粗糙度。特别是，Cu50Ag50膜在退火后具有最高的硬度。从溶解测试中发现，Cu离子浓度比Ag高约40倍。电流效应和过饱和状态可能是加速铜溶解和降低银溶解的原因。

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