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首页> 美国卫生研究院文献>Materials >Fabrication of Completely Polymer-Based Solar Cells with p- and n-Type Semiconducting Block Copolymers with Electrically Inert Polystyrene
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Fabrication of Completely Polymer-Based Solar Cells with p- and n-Type Semiconducting Block Copolymers with Electrically Inert Polystyrene

机译：具有电惰性聚苯乙烯的p型和n型半导体嵌段共聚物的完全基于聚合物的太阳能电池的制造

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It is widely recognized that fullerene derivatives show several advantages as n-type materials in photovoltaic applications. However, conventional [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) exhibits weak absorption in the visible region, and poor morphological stability, due to the facile aggregation. For further improvement of the device performance and durability, utilization of n-type polymeric materials instead of PCBM is considered to be a good way to solve the problems. In this study, we fabricated completely polymer-based solar cells utilizing p- and n-type block copolymers consisting of poly(3-hexylthiophene) (P3HT) and poly{[N,N′-bis(2-octyldodecyl)naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)} [P(NDI2OD-T2)], respectively, containing common polystyrene (PSt) inert blocks, which decreased the size of phase separated structures. Electron mobility in synthesized P(NDI2OD-T2)-b-PSt film enhanced by a factor of 8 compared with homopolymer. The root mean square roughness of the blend film of two block copolymers (12.2 nm) was decreased, compared with that of the simple homopolymers blend (18.8 nm). From the current density-voltage characteristics, it was confirmed that the introduction of PSt into both P3HT and P(NDI2OD-T2) improves short-circuit current density (1.16 to 1.73 mA cm−2) and power-conversion efficiency (0.24% to 0.32%). Better performance is probably due to the uniformity of the phase separation, and the enhancement of charge mobility.
机译：众所周知，富勒烯衍生物作为光伏应用中的n型材料具有多种优势。然而，由于容易聚集，常规的[6,6]-苯基-C61-丁酸甲酯（PCBM）在可见光区域显示出弱吸收性，并且形态稳定性差。为了进一步提高器件性能和耐用性，使用n型聚合物材料代替PCBM被认为是解决问题的一种好方法。在这项研究中，我们利用由聚（3-己基噻吩）（P3HT）和聚{[N，N'-双（2-辛基十二烷基）萘-1]组成的p型和n型嵌段共聚物制造了完全基于聚合物的太阳能电池，4,5,8-双（二​​甲叉酰亚胺）-2,6-二基] -alt-5,5'-（2,2'-联噻吩）} [P（NDI2OD-T2）]，分别包含常见的聚苯乙烯（ PSt）惰性嵌段，可减小相分离结构的尺寸。与均聚物相比，合成的P（NDI2OD-T2）-b-PSt膜的电子迁移率提高了8倍。与简单均聚物共混物（18.8 nm）相比，两种嵌段共聚物的共混膜的均方根粗糙度（12.2 nm）降低了。根据电流密度-电压特性，可以确定将PSt引入P3HT和P（NDI2OD-T2）均可提高短路电流密度（1.16至1.73 mA cm -2 ）和功率-转换效率（0.24％至0.32％）。更好的性能可能是由于相分离的均匀性和电荷迁移率的提高。

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