THE METHOD OF FABRICATION OF SEMICONDUCTING COMPOUNDS OF NITRIDES A3B5 OF p- AND n-TYPE ELECTRIC CONDUCTIVITY

• 1. 增强型HEMT的p型氮化物栅的制备方法、增强型氮化物HEMT及其制备方法 [P] . 中国专利： CN112736137A . 2021-04-30
• 2. 增强型HEMT的p型氮化物栅的制备方法及应用其制备增强型氮化物HEMT的方法 [P] . 中国专利： CN113140630A . 2021-07-20
• 3. Method of fabrication of semiconducting compounds of nitrides A3B5 of P-and N-type electric conductivity [P] . 美国专利： US6329215B1 . 2001-12-11

  机译： P型和N型导电性的氮化物A3B5的半导体化合物的制造方法

• 4. THE METHOD OF FABRICATION OF SEMICONDUCTING COMPOUNDS OF NITRIDES AIII-BV OF p- AND n-TYPE ELECTRIC CONDUCTIVITY [P] . 欧洲知识产权局专利： EP1018167B1 . 2004-02-18

  机译： p型和n型电导率的氮化物AIII-BV的导电化合物的制备方法

• 5. THE METHOD OF FABRICATION OF SEMICONDUCTING COMPOUNDS OF NITRIDES A 3?B 5? OF p- AND n-TYPE ELECTRIC CONDUCTIVITY [P] . 欧洲知识产权局专利： EP1018167A1 . 2000-07-12

  机译： 氮化物A 3？B 5？的半导电化合物的制备方法p型和n型电导率

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