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首页> 美国卫生研究院文献>Microsystems Nanoengineering >Resonant pitch and roll silicon gyroscopes with sub-micron-gap slanted electrodes: Breaking the barrier toward high-performance monolithic inertial measurement units
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Resonant pitch and roll silicon gyroscopes with sub-micron-gap slanted electrodes: Breaking the barrier toward high-performance monolithic inertial measurement units

机译：带有亚微米间隙倾斜电极的共振俯仰和滚动硅陀螺仪：突破了高性能单片惯性测量单元的壁垒

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This paper presents the design, fabrication, and characterization of a novel high quality factor (Q) resonant pitch/roll gyroscope implemented in a 40 μm (100) silicon-on-insulator (SOI) substrate without using the deep reactive-ion etching (DRIE) process. The featured silicon gyroscope has a mode-matched operating frequency of 200 kHz and is the first out-of-plane pitch/roll gyroscope with electrostatic quadrature tuning capability to fully compensate for fabrication non-idealities and variation in SOI thickness. The quadrature tuning is enabled by slanted electrodes with sub-micron capacitive gaps along the (111) plane created by an anisotropic wet etching. The quadrature cancellation enables a 20-fold improvement in the scale factor for a typical fabricated device. Noise measurement of quadrature-cancelled mode-matched devices shows an angle random walk (ARW) of 0.63° √h−1 and a bias instability of 37.7° h−1, partially limited by the noise of the interface electronics. The elimination of silicon DRIE in the anisotropically wet-etched gyroscope improves the gyroscope robustness against the process variation and reduces the fabrication costs. The use of a slanted electrode for quadrature tuning demonstrates an effective path to reach high-performance in future pitch and roll gyroscope designs for the implementation of single-chip high-precision inertial measurement units (IMUs).
机译：本文介绍了在40μμm（100）绝缘体上硅（SOI）衬底上实现的新型高品质因数（Q）谐振俯仰/滚动陀螺仪的设计，制造和特性，无需使用深反应离子蚀刻（ DRIE）过程。特色硅陀螺仪具有200 kHz的模式匹配工作频率，并且是首款具有静电正交调谐功能的面外俯仰/滚动陀螺仪，可完全补偿制造中的非理想性和SOI厚度的变化。通过具有由各向异性湿法刻蚀产生的沿（111）平面的亚微米电容间隙的倾斜电极，可以实现正交调谐。正交消除功能可使典型制造设备的比例因子提高20倍。正交取消模式匹配器件的噪声测量显示，角度随机游走（ARW）为0.63°√h -1 ，偏置不稳定性为37.7°hh -1 ，部分受到接口电子设备噪声的限制。各向异性湿法蚀刻陀螺仪中硅DRIE的消除提高了陀螺仪抵抗工艺变化的鲁棒性并降低了制造成本。将倾斜电极用于正交调谐，证明了在实现单芯片高精度惯性测量单元（IMU）的未来俯仰和旋转陀螺仪设计中达到高性能的一条有效途径。

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