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Electrical and Optical Properties of a Transparent Conductive ITO/Ga2O3/Ag/Ga2O3 Multilayer for Ultraviolet Light-Emitting Diodes

机译:紫外发光二极管用透明导电ITO / Ga2O3 / Ag / Ga2O3多层膜的电学和光学性质

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摘要

We fabricated an indium tin oxide (ITO)/Ga2O3/Ag/Ga2O3 multilayer as a transparent conductive electrode for ultraviolet light-emitting diodes (UV LEDs). The electrical and optical properties of the multilayer were improved by optimizing the annealing temperature of the ITO contact layer and the whole ITO/Ga2O3/Ag/Ga2O3 multilayer, and the thickness of the ITO contact layer and Ag metal layer. After optimization, the sheet resistance and transmittance of the ITO/Ga2O3/Ag/Ga2O3 multilayer was 3.43 Ω/sq and 86.4% at 335 nm, respectively. The ITO/Ga2O3/Ag/Ga2O3 multilayer also exhibited a good ohmic contact characteristic with a specific contact resistance of 1.45×10−3 Ω·cm2. These results show that the proposed ITO/Ga2O3/Ag/Ga2O3 multilayer is a promising alternative as a p-type electrode for UV LEDs.
机译:我们制造了氧化铟锡(ITO)/ Ga2O3 / Ag / Ga2O3多层膜作为用于紫外线发光二极管(UV LED)的透明导电电极。通过优化ITO接触层和整个ITO / Ga2O3 / Ag / Ga2O3多层的退火温度,以及ITO接触层和Ag金属层的厚度,可以改善多层的电学和光学性能。经过优化后,ITO / Ga2O3 / Ag / Ga2O3多层膜的薄层电阻和透射率在335 nm处分别为3.43Ω/ sq和86.4%。 ITO / Ga2O3 / Ag / Ga2O3多层膜还表现出良好的欧姆接触特性,比电阻为1.45×10 -3 Ω·cm 2 。这些结果表明,建议的ITO / Ga 2 O 3 / Ag / Ga 2 O 3 多层结构是有希望作为紫外线LED的p型电极的替代品。

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