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Epitaxial growth and magnetic properties of ultraviolet transparent Ga2O3/(Ga1−xFex)2O3 multilayer thin films

机译:紫外透明Ga2O3 /(Ga1-xFex)2O3多层薄膜的外延生长和磁性

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摘要

Multilayer thin films based on the ferromagnetic and ultraviolet transparent semiconductors may be interesting because their magnetic/electronic/photonic properties can be manipulated by the high energy photons. Herein, the Ga2O3/(Ga1−xFex)2O3 multilayer epitaxial thin films were obtained by alternating depositing of wide band gap Ga2O3 layer and Fe ultrathin layer due to inter diffusion between two layers at high temperature using the laser molecular beam epitaxy technique. The multilayer films exhibits a preferred growth orientation of crystal plane, and the crystal lattice expands as Fe replaces Ga site. Fe ions with a mixed valence of Fe2+ and Fe3+ are stratified distributed in the film and exhibit obvious agglomerated areas. The multilayer films only show a sharp absorption edge at about 250 nm, indicating a high transparency for ultraviolet light. What’s more, the Ga2O3/(Ga1−xFex)2O3 multilayer epitaxial thin films also exhibits room temperature ferromagnetism deriving from the Fe doping Ga2O3.
机译:基于铁磁和紫外线透明半导体的多层薄膜可能很有趣,因为它们的磁性/电子/光子特性可以由高能光子控制。在此,Ga 2 O 3 /(Ga 1-x Fex)2 O 3多层外延薄膜是通过使用激光分子束外延技术在高温下由于两层之间的相互扩散而交替沉积宽带隙Ga 2 O 3层和Fe超薄层而获得的。多层膜表现出优选的晶面生长取向,并且随着Fe替代Ga位点,晶格膨胀。 Fe 2 + 和Fe 3 + 的化合价的Fe离子分层分布在薄膜中,并表现出明显的团聚区域。多层膜仅在约250 nm处显示出清晰的吸收边缘,表明对紫外线具有很高的透明度。此外,Ga2O3 /(Ga1-xFex)2O3多层外延薄膜还表现出源自铁掺杂Ga2O3的室温铁磁性。

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