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首页> 美国卫生研究院文献>Sensors (Basel Switzerland) >Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1−xN Buffer Layer
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Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1−xN Buffer Layer

机译：具有逐步梯度AlxGa1-xN缓冲层的GaN MSM UV光电探测器的选择性增强的UV-A光响应性

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摘要

The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known that the structure of the buffer layers affects the performance of devices fabricated on the GaN epitaxial layers. In this study, we show that the design of a buffer layer structure can make effect on the UV-to-visible rejection ratio of GaN UV photodetectors. The GaN photodetector fabricated on GaN-on-silicon substrate with a step-graded AlxGa−xN buffer layer has a highly-selective photoresponse at 365-nm wavelength. The UV-to-visible rejection ratio of the GaN UV photodetector with the step-graded AlxGa1−xN buffer layer was an order-of-magnitude higher than that of a photodetector with a conventional GaN/AlN multi buffer layer. The maximum photoresponsivity was as high as 5 × 10−2 A/W. This result implies that the design of buffer layer is important for photoresponse characteristics of GaN UV photodetectors as well as the crystal quality of the GaN epitaxial layers.
机译：紫外可见排斥比是GaN基紫外光电检测器优点的重要指标之一。为了成本效益和大规模制造GaN器件，我们尝试在具有复杂缓冲层的硅衬底上生长GaN外延层，以释放应力。众所周知，缓冲层的结构会影响在GaN外延层上制造的器件的性能。在这项研究中，我们证明了缓冲层结构的设计可以影响GaN UV光电探测器的UV可见比。在具有逐步渐变的AlxGa-xN缓冲层的硅基GaN衬底上制造的GaN光电探测器在365 nm波长处具有高度选择性的光响应。具有逐步渐变的AlxGa1-xN缓冲层的GaN UV光电探测器的紫外至可见拒绝比的幅度比具有常规GaN / AlN多层缓冲层的光电探测器的高一个数量级。最大光响应率高达5×10 -2 A / W。该结果表明，缓冲层的设计对于GaN UV光电探测器的光响应特性以及GaN外延层的晶体质量至关重要。

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