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首页> 美国卫生研究院文献>Sensors (Basel Switzerland) >InGaAs Diodes for Terahertz Sensing—Effect of Molecular Beam Epitaxy Growth Conditions
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InGaAs Diodes for Terahertz Sensing—Effect of Molecular Beam Epitaxy Growth Conditions

机译：太赫兹感测的InGaAs二极管-分子束外延生长条件的影响

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摘要

InGaAs-based bow-tie diodes for the terahertz (THz) range are found to be well suited for development of compact THz imaging systems. To further optimize design for sensitive and broadband THz detection, one of the major challenges remains: to understand the noise origin, influence of growth conditions and role of defects for device operation. We present a detailed study of photoreflectance, low-frequency noise characteristics and THz sensitivity of InGaAs bow-tie diodes. The diodes are fabricated from InGaAs wafers grown by molecular beam epitaxy (MBE) on semi-insulating InP substrate under different technological conditions. Photoreflectance spectra indicated the presence of strong built-in electric fields reaching up to 49 kV/cm. It was demonstrated that the spectral density of voltage fluctuations at room temperature was found to be proportional to 1/f, while at lower temperatures, 77–200 K, Lorentzian-type spectra dominate due to random telegraph signals caused by individual capture defects. Furthermore, varying bias voltage, we considered optimal conditions for device room temperature operation in the THz range with respect to signal-to-noise ratio. The THz detectors grown with beam equivalent pressure In/Ga ratio equal to 2.04 exhibit the minimal level of the low-frequency noise, while InGaAs layers grown with beam equivalent pressure In/Ga ratio equal to 2.06 are found to be well suited for fabrication of room temperature bow-tie THz detectors enabling sensitivity of 13 V/W and noise equivalent power (NEP) of 200 pW/√Hz at 0.6 THz due to strong built-in electric field effects.
机译：发现太赫兹（THz）范围的基于InGaAs的蝴蝶结二极管非常适合开发紧凑的THz成像系统。为了进一步优化灵敏和宽带THz检测的设计，主要挑战之一仍然是：了解噪声源，生长条件的影响以及缺陷对设备操作的作用。我们对InGaAs蝴蝶结二极管的光反射，低频噪声特性和THz灵敏度进行了详细研究。二极管由InGaAs晶片制成，该晶片通过分子束外延（MBE）在不同技术条件下在半绝缘InP衬底上生长而成。光反射光谱表明存在高达49 kV / cm的强内置电场。结果表明，室温下电压波动的频谱密度与1 / f成正比，而在较低的温度77-200 K下，由于单个捕获缺陷引起的随机电报信号，洛伦兹型频谱占主导地位。此外，随着偏置电压的变化，我们考虑了信噪比在THz范围内器件室温工作的最佳条件。以束当量压力In / Ga比等于2.04增长的THz检测器表现出最小的低频噪声，而以束当量压力In / Ga比等于2.06增长的InGaAs层非常适合于制造。室温领结THz检测器，由于强大的内置电场效应，在0.6 THz时灵敏度为13 V / W，噪声等效功率（NEP）为200 pW /√Hz。

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