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>Design Optimization and Fabrication of a Novel Structural SOI Piezoresistive Pressure Sensor with High Accuracy
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Design Optimization and Fabrication of a Novel Structural SOI Piezoresistive Pressure Sensor with High Accuracy
This paper presents a novel structural piezoresistive pressure sensor with four-grooved membrane combined with rood beam to measure low pressure. In this investigation, the design, optimization, fabrication, and measurements of the sensor are involved. By analyzing the stress distribution and deflection of sensitive elements using finite element method, a novel structure featuring high concentrated stress profile (HCSP) and locally stiffened membrane (LSM) is built. Curve fittings of the mechanical stress and deflection based on FEM simulation results are performed to establish the relationship between mechanical performance and structure dimension. A combination of FEM and curve fitting method is carried out to determine the structural dimensions. The optimized sensor chip is fabricated on a SOI wafer by traditional MEMS bulk-micromachining and anodic bonding technology. When the applied pressure is 1 psi, the sensor achieves a sensitivity of 30.9 mV/V/psi, a pressure nonlinearity of 0.21% FSS and an accuracy of 0.30%, and thereby the contradiction between sensitivity and linearity is alleviated. In terms of size, accuracy and high temperature characteristic, the proposed sensor is a proper choice for measuring pressure of less than 1 psi.
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机译：本文提出了一种新颖的结构压阻式压力传感器，该传感器具有四槽膜与顶梁相结合来测量低压。在这项调查中，涉及传感器的设计，优化，制造和测量。通过有限元方法分析敏感元件的应力分布和挠度，建立了一种具有高集中应力分布（HCSP）和局部加强膜（LSM）的新型结构。根据有限元模拟结果对机械应力和挠度进行曲线拟合，建立机械性能与结构尺寸之间的关系。有限元分析和曲线拟合方法相结合来确定结构尺寸。经过优化的传感器芯片是通过传统的MEMS体微加工和阳极键合技术在SOI晶圆上制造的。当施加的压力为1 psi时，传感器达到30.9 mV / V / psi的灵敏度，0.21％FSS的压力非线性和0.30％的精度，从而缓解了灵敏度和线性之间的矛盾。在尺寸，精度和高温特性方面，建议的传感器是测量小于1 psi压力的合适选择。
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