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首页> 美国卫生研究院文献>Scientific Reports >Cyclotron resonance in the high mobility GaAs/AlGaAs 2D electron system over the microwave mm-wave and terahertz- bands
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Cyclotron resonance in the high mobility GaAs/AlGaAs 2D electron system over the microwave mm-wave and terahertz- bands

机译：高迁移率GaAs / AlGaAs 2D电子系统中回旋加速器在微波毫米波和太赫兹波段上的共振

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摘要

The reflected microwave power from the photo-excited high mobility GaAs/AlGaAs 2D device has been measured over the wide frequency band spanning from 30 to 330 GHz simultaneously along with diagonal magnetoresistance as a function of the magnetic field. Easily distinguishable resonances in the reflected power signal are observed at the same magnetic fields as a reduced amplitude in the Shubnikov-de Haas (SdH) oscillations of the diagonal magnetoresistance. The reflection resonances with concurrent amplitude reduction in SdH oscillations are correlated with cyclotron resonance induced by microwave, mm-wave, and terahertz photoexcitation. The magnetoplasma effect was also investigated. The results suggest a finite frequency zero-magnetic-field intercept, providing an estimate for the plasma frequency. The experimentally measured plasma frequency appears to be somewhat lower than the estimated plasma frequency for these Hall bars. The results, in sum, are consistent with an effective mass ratio of m*/m = 0.067, the standard value, even in these high mobility GaAs/AlGaAs devices, at very large filling factors. Preliminary findings from this article have been published as conference proceedings, see Kriisa, A., et al., J. of Phys. Conf. Ser. >864, 012057 (2017).
机译：来自光激发高迁移率GaAs / AlGaAs 2D器件的反射微波功率已在30至330 GHz的宽频带上同时进行了测量，同时还测量了对角磁阻随磁场的变化。在与对角磁阻的Shubnikov-de Haas（SdH）振荡的振幅减小相同的磁场下，可以观察到反射功率信号中容易区分的共振。 SdH振荡中振幅同时减小的反射共振与微波，毫米波和太赫兹光激发引起的回旋共振相关。还研究了磁浆效应。结果表明有限频率零磁场拦截，提供了等离子体频率的估计。实验测得的等离子体频率似乎比这些霍尔棒的估计等离子体频率低一些。总而言之，即使在这些高迁移率的GaAs / AlGaAs器件中，在非常大的填充因子下，结果也与有效质量比m * / m = 0.067一致，该标准值为标准值。本文的初步发现已作为会议论文集发表，请参见Kriisa，A.等，J。of Phys。 Conf。老师> 864 ，012057（2017年）。

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