首页> 美国卫生研究院文献>Scientific Reports >A kinetic Monte Carlo simulation method of van der Waals epitaxy for atomistic nucleation-growth processes of transition metal dichalcogenides
【2h】

A kinetic Monte Carlo simulation method of van der Waals epitaxy for atomistic nucleation-growth processes of transition metal dichalcogenides

机译:过渡金属二卤化物原子成核-生长过程的范德华外延动力学蒙特卡罗模拟方法

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

Controlled growth of crystalline solids is critical for device applications, and atomistic modeling methods have been developed for bulk crystalline solids. Kinetic Monte Carlo (KMC) simulation method provides detailed atomic scale processes during a solid growth over realistic time scales, but its application to the growth modeling of van der Waals (vdW) heterostructures has not yet been developed. Specifically, the growth of single-layered transition metal dichalcogenides (TMDs) is currently facing tremendous challenges, and a detailed understanding based on KMC simulations would provide critical guidance to enable controlled growth of vdW heterostructures. In this work, a KMC simulation method is developed for the growth modeling on the vdW epitaxy of TMDs. The KMC method has introduced full material parameters for TMDs in bottom-up synthesis: metal and chalcogen adsorption/desorption/diffusion on substrate and grown TMD surface, TMD stacking sequence, chalcogen/metal ratio, flake edge diffusion and vacancy diffusion. The KMC processes result in multiple kinetic behaviors associated with various growth behaviors observed in experiments. Different phenomena observed during vdW epitaxy process are analysed in terms of complex competitions among multiple kinetic processes. The KMC method is used in the investigation and prediction of growth mechanisms, which provide qualitative suggestions to guide experimental study.
机译:结晶固体的受控生长对于设备应用至关重要,并且已经为块状结晶固体开发了原子建模方法。动力学蒙特卡洛(KMC)模拟方法在实际时间尺度上的固体生长过程中提供了详细的原子尺度过程,但尚未开发将其应用于范德华(vdW)异质结构的生长模型。具体而言,单层过渡金属二硫化二氢(TMDs)的生长目前面临巨大挑战,基于KMC模拟的详细理解将为实现vdW异质结构的受控生长提供关键指导。在这项工作中,开发了一种KMC模拟方法来对TMD的vdW外延进行生长建模。 KMC方法为自下而上的合成过程中的TMD引入了完整的材料参数:金属和硫族元素在底物和生长的TMD表面上的吸附/解吸/扩散,TMD堆叠顺序,硫族元素/金属比,片状边缘扩散和空位扩散。 KMC过程导致与实验中观察到的各种生长行为相关的多种动力学行为。根据多个动力学过程之间的复杂竞争,分析了在vdW外延过程中观察到的不同现象。 KMC法用于生长机理的研究和预测,为指导实验研究提供定性建议。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号