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Effect of lithographically-induced strain relaxation on the magnetic domain configuration in microfabricated epitaxially grown Fe81Ga19

机译:光刻诱导的应变弛豫对微细外延生长Fe81Ga19的磁畴构型的影响

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摘要

We investigate the role of lithographically-induced strain relaxation in a micron-scaled device fabricated from epitaxial thin films of the magnetostrictive alloy Fe81Ga19. The strain relaxation due to lithographic patterning induces a magnetic anisotropy that competes with the magnetocrystalline and shape induced anisotropies to play a crucial role in stabilising a flux-closing domain pattern. We use magnetic imaging, micromagnetic calculations and linear elastic modelling to investigate a region close to the edges of an etched structure. This highly-strained edge region has a significant influence on the magnetic domain configuration due to an induced magnetic anisotropy resulting from the inverse magnetostriction effect. We investigate the competition between the strain-induced and shape-induced anisotropy energies, and the resultant stable domain configurations, as the width of the bar is reduced to the nanoscale range. Understanding this behaviour will be important when designing hybrid magneto-electric spintronic devices based on highly magnetostrictive materials.
机译:我们调查了由磁致伸缩合金Fe81Ga19的外延薄膜制造的微米级器件中光刻诱发的应变松弛的作用。由于光刻构图而引起的应变弛豫会引起与磁晶竞争的磁各向异性,并且形状诱导的各向异性在稳定磁通量闭合磁畴图案方面起着至关重要的作用。我们使用磁成像,微磁计算和线性弹性建模来研究靠近蚀刻结构边缘的区域。由于逆磁致伸缩效应引起的感应磁各向异性,该高度应变的边缘区域对磁畴构型具有重大影响。我们研究了应变感应和形状感应各向异性能量之间的竞争,以及随着棒的宽度减小到纳米级范围而产生的稳定畴结构。当设计基于高磁致伸缩材料的混合磁电自旋电子器件时,了解这种行为非常重要。

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