首页> 外国专利> A process for the manufacture of a laminate with epitaxially grown layers of a magnetic shape or configuration retention memory, - material and the layer having epitaxial layers of a magnetic shape or configuration retention memory, - material as well as its use

A process for the manufacture of a laminate with epitaxially grown layers of a magnetic shape or configuration retention memory, - material and the layer having epitaxial layers of a magnetic shape or configuration retention memory, - material as well as its use

机译:具有具有磁性形状或构型保持记忆的外延生长层的层压体的制造方法-材料和具有磁性形状或构型保持记忆的外延层的层-材料及其用途

摘要

A process for the manufacture of a laminate with epitaxially grown layers of a magnetic shape or configuration retention memory, - material, in which a a - or multilayer substrate at least a sacrificial layer is applied, is structured in the following, the sacrificial layer, then at least one layer of a magnetic shape or configuration retention memory, - material is applied and of the so produced composite, in turn, only partially in the following, the sacrificial layer is removed, and on the layers made of the magnetic shape or configuration retention memory, - material is one or more further layers are applied, for generating a restoring force for the layers made of the magnetic shape memory material are used, wherein the substrate surface or one or more layers of substrate or the substrate region, which is connected with the sacrificial layer is connected in a materially integral manner, a monocrystalline or biaxially textured structure, and the sacrificial layer to the epitaxial growth of the layers made of the magnetic shape or configuration retention memory, - material in accordance with the epitaxial structure of the single-crystal or biaxially textured substrate material is realized.
机译:在下文中,构造了一种用于制造具有磁性形状或构型保持记忆的外延生长层的层压材料的方法,在该材料中,应用了至少一个牺牲层的aa或多层基底。至少涂覆一层具有磁性形状或构型的记忆体,然后涂覆材料并制成复合材料,然后仅在下面部分除去牺牲层,然后在由磁性形状或构型的层上保留记忆-材料是施加的一层或多层,用于产生由磁性形状记忆材料制成的层的恢复力,其中基底表面或一层或多层基底或基底区域与牺牲层相连接的材料以整体方式,单晶或双轴织构结构连接,并且牺牲层与外延gr由于由磁性形状或构型保持存储器制成的层,实现了根据单晶或双轴纹理化衬底材料的外延结构的材料。

著录项

  • 公开/公告号DE102008001005B4

    专利类型

  • 公开/公告日2011-06-22

    原文格式PDF

  • 申请/专利权人

    申请/专利号DE20081001005

  • 发明设计人

    申请日2008-04-04

  • 分类号B81C1;B81B1;B81B7;C30B25/02;C23C14/16;

  • 国家 DE

  • 入库时间 2022-08-21 17:48:02

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