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首页> 美国卫生研究院文献>Scientific Reports >Integrating Epitaxial-Like Pb(ZrTi)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor
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Integrating Epitaxial-Like Pb(ZrTi)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor

机译：将外延类Pb（ZrTi）O3薄膜集成到硅中用于下一代铁电场效应晶体管

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The development of ferroelectric random-access memory (FeRAM) technology with control of grain boundaries would result in a breakthrough for new nonvolatile memory devices. The excellent piezoelectric and electrical properties of bulk ferroelectrics are degraded when the ferroelectric is processed into thin films because the grain boundaries then form randomly. Controlling the nature of nucleation and growth are the keys to achieving a good crystalline thin-film. However, the sought after high-quality ferroelectric thin-film has so far been thought to be impossible to make, and research has been restricted to atomic-layer deposition which is extremely expensive and has poor reproducibility. Here we demonstrate a novel epitaxial-like growth technique to achieve extremely uniform and large rectangular-shaped grains in thin-film ferroelectrics by dividing the nucleation and growth phases. With this technique, it is possible to achieve 100-μm large uniform grains, even made available on Si, which is large enough to fabricate a field-effect transistor in each grain. The electrical and reliability test results, including endurance and retention test results, were superior to other FeRAMs reported so far and thus the results presented here constitute the first step toward the development of FeRAM using epitaxial-like ferroelectric thin-films.
机译：控制晶界的铁电随机存取存储器（FeRAM）技术的发展将为新型非易失性存储设备带来突破。当铁电体被加工成薄膜时，块状铁电体的优异的压电和电性能会降低，因为随后会随机形成晶界。控制成核和生长的性质是获得良好晶体薄膜的关键。然而，迄今为止，人们一直认为不可能追求高品质的铁电薄膜，并且研究仅限于原子层沉积，该沉积极其昂贵并且再现性较差。在这里，我们演示了一种新颖的类似外延生长的技术，该技术通过划分成核阶段和生长阶段，在薄膜铁电材料中获得极其均匀且大的矩形晶粒。通过这种技术，甚至可以在Si上获得100μm大的均匀晶粒，该晶粒足够大以在每个晶粒中制造场效应晶体管。电气性能和可靠性测试结果，包括耐久性和保持性测试结果，均优于迄今为止报道的其他FeRAM，因此，此处给出的结果构成了使用类外延铁电薄膜开发FeRAM的第一步。

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