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首页> 美国卫生研究院文献>Scientific Reports >Disordered Nanohole Patterns in Metal-Insulator Multilayer for Ultra-broadband Light Absorption: Atomic Layer Deposition for Lithography Free Highly repeatable Large Scale Multilayer Growth
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Disordered Nanohole Patterns in Metal-Insulator Multilayer for Ultra-broadband Light Absorption: Atomic Layer Deposition for Lithography Free Highly repeatable Large Scale Multilayer Growth

机译：用于超宽带光吸收的金属-绝缘体多层中的无序纳米孔图案：用于光刻的原子层沉积无高度可重复的大规模多层生长

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摘要

In this paper, we demonstrate a facile, lithography free, and large scale compatible fabrication route to synthesize an ultra-broadband wide angle perfect absorber based on metal-insulator-metal-insulator (MIMI) stack design. We first conduct a simulation and theoretical modeling approach to study the impact of different geometries in overall stack absorption. Then, a Pt-Al2O3 multilayer is fabricated using a single atomic layer deposition (ALD) step that offers high repeatability and simplicity in the fabrication step. In the best case, we get an absorption bandwidth (BW) of 600 nm covering a range of 400 nm–1000 nm. A substantial improvement in the absorption BW is attained by incorporating a plasmonic design into the middle Pt layer. Our characterization results demonstrate that the best configuration can have absorption over 0.9 covering a wavelength span of 400 nm–1490 nm with a BW that is 1.8 times broader compared to that of planar design. On the other side, the proposed structure retains its absorption high at angles as wide as 70°. The results presented here can serve as a beacon for future performance enhanced multilayer designs where a simple fabrication step can boost the overall device response without changing its overall thickness and fabrication simplicity.
机译：在本文中，我们演示了一种基于金属-绝缘体-金属-绝缘体（MIMI）叠层设计的简便，无光刻且可大规模兼容的制造路线，以合成超宽带广角完美吸收体。我们首先进行仿真和理论建模，以研究不同几何形状对整体烟囱吸收的影响。然后，使用单原子层沉积（ALD）步骤制造Pt-Al2O3多层，该步骤在制造步骤中具有很高的可重复性和简便性。在最佳情况下，我们获得600 coveringnm的吸收带宽（BW），覆盖范围为400 nm–1000 nm。通过将等离子体设计结合到中间的Pt层中，可以大大提高吸收带宽。我们的表征结果表明，最佳配置在400 nm-1490 coveringnm波长范围内的吸收率可超过0.9，其BW宽于平面设计的1.8倍。另一方面，所提出的结构在高达70°的角度处仍保持较高的吸收率。此处提供的结果可作为未来性能增强多层设计的信标，其中简单的制造步骤可以提高整体设备的响应速度，而无需改变其整体厚度和制造简易性。

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