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首页> 美国卫生研究院文献>Scientific Reports >Proximity-effect-induced Superconducting Gap in Topological Surface States – A Point Contact Spectroscopy Study of NbSe2/Bi2Se3 Superconductor-Topological Insulator Heterostructures
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Proximity-effect-induced Superconducting Gap in Topological Surface States – A Point Contact Spectroscopy Study of NbSe2/Bi2Se3 Superconductor-Topological Insulator Heterostructures

机译：邻近效应在拓扑表面态中的超导间隙– NbSe2 / Bi2Se3超导体-拓扑绝缘子异质结构的点接触光谱研究

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摘要

Proximity-effect-induced superconductivity was studied in epitaxial topological insulator Bi2Se3 thin films grown on superconducting NbSe2 single crystals. A point contact spectroscopy (PCS) method was used at low temperatures down to 40 mK. An induced superconducting gap in Bi2Se3 was observed in the spectra, which decreased with increasing Bi2Se3 layer thickness, consistent with the proximity effect in the bulk states of Bi2Se3 induced by NbSe2. At very low temperatures, an extra point contact feature which may correspond to a second energy gap appeared in the spectrum. For a 16 quintuple layer Bi2Se3 on NbSe2 sample, the bulk state gap value near the top surface is ~159 μeV, while the second gap value is ~120 μeV at 40 mK. The second gap value decreased with increasing Bi2Se3 layer thickness, but the ratio between the second gap and the bulk state gap remained about the same for different Bi2Se3 thicknesses. It is plausible that this is due to superconductivity in Bi2Se3 topological surface states induced through the bulk states. The two induced gaps in the PCS measurement are consistent with the three-dimensional bulk state and the two-dimensional surface state superconducting gaps observed in the angle-resolved photoemission spectroscopy (ARPES) measurement.
机译：研究了在超导NbSe2单晶上生长的外延拓扑绝缘体Bi2Se3薄膜中的邻近效应诱导的超导性。在低至40（mK的低温下使用点接触光谱法（PCS）。在光谱中观察到Bi2Se3中感应的超导间隙，该间隙随Bi2Se3层厚度的增加而减小，这与NbSe2诱导的Bi2Se3体态中的邻近效应一致。在非常低的温度下，可能会在光谱中出现第二点能隙的额外点接触特征。对于NbSe2样品上的16倍五重层Bi2Se3，在40 mK下，顶表面附近的体态间隙值为〜159μeV，而第二间隙值为〜120μeV。随着Bi2Se3层厚度的增加，第二间隙值减小，但是对于不同的Bi2Se 3 厚度，第二间隙与体态间隙的比值保持大致相同。可能这是由于通过体态引起的Bi 2 Se 3 拓扑表面态的超导性所致。 PCS测量中的两个感应间隙与在角分辨光发射光谱（ARPES）测量中观察到的三维体态和二维表面态超导间隙一致。

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