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VOLTAGE-CONTROLLED MAGNETIC-BASED DEVICES HAVING TOPOLOGICAL INSULATOR/MAGNETIC INSULATOR HETEROSTRUCTURE

机译：具有拓扑绝缘体/电磁绝缘体异质结构的基于电压控制的磁性设备

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摘要

A voltage-controlled magnetic based device is described that includes a magnetic insulator; a topological insulator adjacent the magnetic insulator; and magnetic dopants within the topological insulator. The magnetic dopants are located within an edge region of the topological insulator to inhibit charge current flow in the topological insulator during a switching operation using an applied electric field generating by applying a switching voltage across two electrodes at opposite sides of the topological insulator. Power dissipation due to carrier-based currents can be avoided or at least minimized by the magnetic dopants at the edges of the topological insulator.

机译：描述了一种电压控制的基于磁性的装置，该装置包括磁绝缘体;和与磁绝缘体相邻的拓扑绝缘体;和拓扑绝缘体中的磁性掺杂剂。磁性掺杂剂位于拓扑绝缘体的边缘区域内，以在开关操作期间利用通过在拓扑绝缘体的相对两侧的两个电极之间施加开关电压而产生的施加电场来抑制电荷电流在拓扑绝缘体中流动。通过基于拓扑的绝缘体的边缘处的磁性掺杂剂可以避免或至少最小化由于基于载流子的电流引起的功耗。

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公开/公告号US2017288666A1

专利类型
公开/公告日2017-10-05

原文格式PDF
申请/专利权人 UNIVERSITY OF IOWA RESEARCH FOUNDATION;
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申请/专利号US201615087244
发明设计人 MICHAEL FLATTÉ;
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申请日2016-03-31
分类号H03K17/80;H03K19/18;H01L43/04;H01L43/06;H01L43/10;
国家 US
入库时间 2022-08-21 13:49:37

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