There is broad interest in surface functionalization of 2D materials and its related applications. In this work, we present a novel graphene layer transistor fabricated by introducing fluorinated graphene (fluorographene), one of the thinnest 2D insulator, as the gate dielectric material. For the first time, the dielectric properties of fluorographene, including its dielectric constant, frequency dispersion, breakdown electric field and thermal stability, were comprehensively investigated. We found that fluorographene with extremely thin thickness (5 nm) can sustain high resistance at temperature up to 400°C. The measured breakdown electric field is higher than 10 MV cm−1, which is the heightest value for dielectric materials in this thickness. Moreover, a proof-of-concept methodology, one-step fluorination of 10-layered graphene, is readily to obtain the fluorographene/graphene heterostructures, where the top-gated transistor based on this structure exhibits an average carrier mobility above 760 cm2/Vs, higher than that obtained when SiO2 and GO were used as gate dielectric materials. The demonstrated fluorographene shows excellent dielectric properties with fast and scalable processing, providing a universal applications for the integration of versatile nano-electronic devices.
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机译：二维材料及其相关应用的表面功能化引起了广泛兴趣。在这项工作中，我们提出了一种新颖的石墨烯层晶体管，该晶体管是通过引入最薄的2D绝缘体之一的氟化石墨烯（fluorographene）作为栅极介电材料而制成的。首次全面研究了氟石墨烯的介电性能，包括介电常数，频率色散，击穿电场和热稳定性。我们发现，厚度极薄（5 nm）的氟石墨烯可以在高达400°C的温度下保持高电阻。测得的击穿电场高于10 MV cm -1 ，这是该厚度下介电材料的最高值。此外，采用概念验证的方法，即十层石墨烯的一步氟化，很容易获得氟代石墨烯/石墨烯的异质结构，其中基于该结构的顶部栅极晶体管的平均载流子迁移率高于760 cm 2 / Vs，高于使用SiO2和GO作为栅极介电材料时获得的值。所展示的氟代石墨烯具有出色的介电性能，并具有快速且可扩展的处理能力，为通用纳米电子器件的集成提供了广泛的应用。
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