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首页> 美国卫生研究院文献>Scientific Reports >The Effect of Dielectric Constants on Noble Metal/Semiconductor SERS Enhancement: FDTD Simulation and Experiment Validation of Ag/Ge and Ag/Si Substrates
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The Effect of Dielectric Constants on Noble Metal/Semiconductor SERS Enhancement: FDTD Simulation and Experiment Validation of Ag/Ge and Ag/Si Substrates

机译：介电常数对贵金属/半导体SERS增强的影响：Ag / Ge和Ag / Si衬底的FDTD模拟和实验验证

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摘要

The finite-difference time-domain (FDTD) method was employed to simulate the electric field distribution for noble metal (Au or Ag)/semiconductor (Ge or Si) substrates. The simulation showed that noble metal/Ge had stronger SERS enhancement than noble metal/Si, which was mainly attributed to the different dielectric constants of semiconductors. In order to verify the simulation, Ag nanoparticles with the diameter of ca. 40 nm were grown on Ge or Si wafer (Ag/Ge or Ag/Si) and employed as surface-enhanced Raman scattering substrates to detect analytes in solution. The experiment demonstrated that both the two substrates exhibited excellent performance in the low concentration detection of Rhodamine 6G. Besides, the enhancement factor (1.3 × 109) and relative standard deviation values (less than 11%) of Ag/Ge substrate were both better than those of Ag/Si (2.9 × 107 and less than 15%, respectively), which was consistent with the FDTD simulation. Moreover, Ag nanoparticles were grown in-situ on Ge substrate, which kept the nanoparticles from aggregation in the detection. To data, Ag/Ge substrates showed the best performance for their sensitivity and uniformity among the noble metal/semiconductor ones.
机译：采用时域有限差分法（FDTD）模拟了贵金属（Au或Ag）/半导体（Ge或Si）衬底的电场分布。模拟表明，贵金属/锗比贵金属/硅具有更强的SERS增强作用，这主要归因于半导体的不同介电常数。为了验证模拟，银纳米粒子的直径约为。在Ge或Si晶片（Ag / Ge或Ag / Si）上生长40 nm，并用作表面增强拉曼散射基板，以检测溶液中的分析物。实验证明两种底物在罗丹明6G的低浓度检测中均表现出优异的性能。此外，Ag / Ge衬底的增强因子（1.3×10 9 ）和相对标准偏差值（小于11％）均优于Ag / Si衬底（2.9×10 ）分别为7 和小于15％），这与FDTD模拟一致。此外，Ag纳米粒子在Ge衬底上原位生长，这可以防止纳米粒子在检测中聚集。数据显示，在贵金属/半导体衬底中，Ag / Ge衬底表现出最佳的灵敏度和均匀性。

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