• 主题
高级搜索  >
历史搜索 清空历史
首页> 美国卫生研究院文献>Nanoscale Research Letters >Morphology Structure and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers
【2h】

Morphology Structure and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers

机译：具有GeSiSn纳米岛和应变层的半导体膜的形貌结构和光学性质

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The dependences of the two-dimensional to three-dimensional growth (2D-3D) critical transition thickness on the composition for GeSiSn films with a fixed Ge content and Sn content from 0 to 16% at the growth temperature of 150 °С have been obtained. The phase diagrams of the superstructure change during the epitaxial growth of Sn on Si and on Ge(100) have been built. Using the phase diagram data, it becomes possible to identify the Sn cover on the Si surface and to control the Sn segregation on the superstructure observed on the reflection high-energy electron diffraction (RHEED) pattern. The multilayer structures with the GeSiSn pseudomorphic layers and island array of a density up to 1.8 × 1012 cm−2 have been grown with the considering of the Sn segregation suppression by the decrease of GeSiSn and Si growth temperature. The double-domain (10 × 1) superstructure related to the presence of Sn on the surface was first observed in the multilayer periodic structures during Si growth on the GeSiSn layer. The periodical GeSiSn/Si structures demonstrated the photoluminescence in the range of 0.6–0.85 eV corresponding to the wavelength range of 1.45–2 μm. The calculation of the band diagram for the structure with the pseudomorphic Ge0.315Si0.65Sn0.035 layers allows assuming that photoluminescence peaks correspond to the interband transitions between the X valley in Si or the Δ4-valley in GeSiSn and the subband of heavy holes in the GeSiSn layer.
机译：在生长温度为150°C时，已获得二维至三维生长（2D-3D）临界转变厚度对Ge含量固定且Sn含量从0％到16％的GeSiSn薄膜成分的依赖性。建立了在Si和Ge（100）上Sn外延生长过程中上层结构变化的相图。使用相图数据，可以识别在硅表面上的锡覆盖层，并控制在反射高能电子衍射（RHEED）图案上观察到的上部结构上的锡偏析。考虑到通过锡的偏析抑制，已经生长出具有GeSiSn假晶层和岛状阵列的密度高达1.8×10 12 cm -2 的多层结构。降低了GeSiSn和Si的生长温度。首先在GeSiSn层上的Si生长过程中，在多层周期结构中观察到与表面上Sn的存在有关的双畴（10×1）超结构。周期性的GeSiSn / Si结构显示出0.6-0.85eV范围内的光致发光，对应于1.45-2μm的波长范围。对具有伪晶格Ge0.315Si0.65Sn0.035层的结构的能带图的计算，可以假设光致发光峰对应于Si中的X谷或GeSiSn中的Δ4-谷与Al中的重空穴的子带之间的带间跃迁。 GeSiSn层。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号