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首页> 外文期刊>CERAMICS INTERNATIONAL >Microstructure evolution and optical properties of c-axis-oriented ZnO thin films incorporated with silver nanoisland layers
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Microstructure evolution and optical properties of c-axis-oriented ZnO thin films incorporated with silver nanoisland layers

机译：含银纳米岛层的c轴取向ZnO薄膜的微观结构演变和光学性质

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摘要

Highly c-axis-oriented ZnO thin films incorporated with various numbers of Ag nanoisland layers were fabricated in this study by alternating sputtering-deposited ZnO and Ag layers on Si substrates. Two such ZnO-Ag layered structures were fabricated: the first by using a 150-nm ZnO film-Ag island layer/Si, and the second by using three applications of a 50-nm ZnO film-Ag island layer/Si. The crystallographic features of the as-deposited ZnO thin film on the Si substrate exhibited a pure c-axis orientation. However, the degree of the c-axis texture of the ZnO thin films slightly decreased after inserting Ag island layers. The ZnO thin-film surface became quite rough because the surface morphology was transformed from being dense and lat to exhibit a loosely columnar grain structure. Transmittance electron microscopy (TEM) images showed that the Ag islands were clearly distributed on the ZnO/substrate and ZnO/ZnO interfaces. The photoluminescence measurement results indicated that the near-band-edge (NBE) emission peak intensity was enhanced by nearly two orders of magnitude in the 150-nm ZnO film-Ag island layer/Si compared with that of the as-deposited 150-nm ZnO thin film without an inserted Ag island layer. Inserting additional Ag island layers did not increase the NBE emission intensity;;instead, the visible emission band intensity was markedly increased. This was attributed to the substantial change in the ZnO thin film microstructure caused by inserting the Ag island layers.
机译：本研究通过在Si衬底上交替溅射沉积的ZnO和Ag层来制造结合了多个Ag纳米岛层的高度c轴取向ZnO薄膜。制造了两个这样的ZnO-Ag层状结构：第一个使用150nm的ZnO膜-Ag岛层/ Si，第二个使用50nm的ZnO膜-Ag岛层/ Si。 Si衬底上沉积的ZnO薄膜的晶体学特征表现出纯c轴取向。然而，在插入银岛层后，ZnO薄膜的c轴织构度略有下降。 ZnO薄膜的表面变得很粗糙，因为表面形态从致密，平整转变为松散的柱状晶粒结构。透射电子显微镜（TEM）图像显示，Ag岛清楚地分布在ZnO /衬底和ZnO / ZnO界面上。光致发光测量结果表明，与沉积时的150nm相比，150nm ZnO膜-Ag岛层/ Si中的近带边缘（NBE）发射峰强度提高了近两个数量级。没有插入的银岛层的ZnO薄膜。插入额外的银岛层不会增加NBE的发射强度;相反，可见发射带的强度会明显增加。这归因于由于插入银岛层而引起的ZnO薄膜微观结构的实质性变化。

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