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首页> 美国卫生研究院文献>Nanoscale Research Letters >Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell
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Investigation of GaInAs strain reducing layer combined with InAs quantum dots embedded in Ga(In)As subcell of triple junction GaInP/Ga(In)As/Ge solar cell

机译：GaInAs应变降低层与嵌入三结GaInP / Ga（In）As / Ge太阳能电池Ga（In）As子电池中的InAs量子点结合的研究

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The InAs/GaAs quantum dots structure embedded in GaInP/Ga(In)As/Ge triple junction solar cell with and without Ga0.90In0.10As strain reducing layer was investigated. Conversion efficiency of 33.91% at 1,000 suns AM 1.5D with Ga0.90In0.10As strain reducing layer was demonstrated. A 1.19% improvement of the conversion efficiency was obtained via inserting the Ga0.90In0.10As strain reducing layer. The main contribution of this improvement was from the increase of the short-circuit current, which is caused by the reduction of the Shockley–Read–Hall recombination centers. Consequently, there was a decrease in open circuit voltage due to the lower thermal activation energy of confined carriers in Ga0.9In0.1As than GaAs and a reduction in the effective band gap of quantum dots.
机译：研究了嵌入和不嵌入Ga0.90In0.10As应变减小层的GaInP / Ga（In）As / Ge三结太阳能电池中InAs / GaAs量子点结构。在Ga0.90In0.10As应变降低层的条件下，在1,000个太阳AM 1.5D下的转换效率为33.91％。通过插入Ga0.90In0.10As应变降低层，可以将转换效率提高1.19％。这种改进的主要贡献是由于短路电流的增加，这是由于肖克利-雷德-霍尔复合中心的减少而引起的。结果，由于Ga0.9In0.1As中的约束载流子的热活化能比GaAs低，因此开路电压降低，并且量子点的有效带隙减小。

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