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首页> 美国卫生研究院文献>Nanoscale Research Letters >Enhancement in electron transport and light emission efficiency of a Si nanocrystal light-emitting diode by a SiCN/SiC superlattice structure
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Enhancement in electron transport and light emission efficiency of a Si nanocrystal light-emitting diode by a SiCN/SiC superlattice structure

机译：通过SiCN / SiC超晶格结构增强Si纳米晶体发光二极管的电子传输和发光效率

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摘要

We report an enhancement in light emission efficiency of Si nanocrystal (NC) light-emitting diodes (LEDs) by employing 5.5 periods of SiCN/SiC superlattices (SLs). SiCN and SiC layers in SiCN/SiC SLs were designed by considering the optical bandgap to induce the uniform electron sheet parallel to the SL planes. The electrical property of Si NC LED with SiCN/SiC SLs was improved. In addition, light output power and wall-plug efficiency of the Si NC LED with SiCN/SiC SLs were also enhanced by 50% and 40%, respectively. This was attributed to both the formation of two-dimensional electron gas, i.e., uniform electron sheet parallel to the SiCN/SiC SL planes due to the conduction band offset between the SiCN layer and SiC layer, and an enhanced electron transport into the Si NCs due to a lower tunneling barrier height. We show here that the use of the SiCN/SiC SL structure can be very useful in realizing a highly efficient Si NC LED.
机译：我们报告通过采用5.5周期的SiCN / SiC超晶格（SLs）来提高Si纳米晶体（NC）发光二极管（LED）的发光效率。通过考虑光学带隙来诱导平行于SL平面的均匀电子片，来设计SiCN / SiC SL中的SiCN和SiC层。具有SiCN / SiC SLs的Si NC LED的电性能得到改善。此外，带有SiCN / SiC SL的Si NC LED的光输出功率和壁挂效率也分别提高了50％和40％。这归因于二维电子气的形成，即由于SiCN层和SiC层之间的导带偏移，平行于SiCN / SiC SL平面的均匀电子片的形成，以及增强的电子向Si NCs的传输由于较低的隧道势垒高度。我们在这里表明，SiCN / SiC SL结构的使用在实现高效Si NC LED方面非常有用。

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