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首页> 外文期刊>Advanced Materials >Enhancement in Light Emission Efficiency of a Silicon Nanocrystal Light-Emitting Diode by Multiple-Luminescent Structures
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Enhancement in Light Emission Efficiency of a Silicon Nanocrystal Light-Emitting Diode by Multiple-Luminescent Structures

机译：通过多发光结构增强硅纳米晶体发光二极管的发光效率

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摘要

A lot of research has been devoted towards the Si-based micro-photonics due to the applications in silicon-based optoelectronic devices. The Si-based light sources could reduce the fabrication cost because the compatibility with a conventional Si technology is better than any other materials such as conventional GaAs- and GaN-based materials. Bulk silicon has poor luminescence efficiency due to the indirect nature of its band gap and is thus highly inefficient for the light sources. However, if the size of Si nanocrystals (nc-Si) is smaller than the free exciton Bohr radius of bulk Si (～4.6 nm), the light emission efficiency could be much enhanced due to an increase in overlapping of electron-hole wave functions, that is, a quantum confinement effect. Because of this, nc-Si light emitting diodes (LEDs) have been investigated as promising light sources for the next generation of photonic applications.
机译：由于在硅基光电器件中的应用，许多研究致力于硅基微光子学。基于硅的光源可以降低制造成本，因为与常规硅技术的兼容性优于任何其他材料，例如常规的基于GaAs和GaN的材料。块状硅由于其带隙的间接性质而具有较差的发光效率，因此对于光源而言效率极低。但是，如果硅纳米晶体（nc-Si）的尺寸小于块状硅的自由激子玻尔半径（〜4.6 nm），则由于电子-空穴波函数的重叠增加，发光效率将大大提高。即量子约束效应。因此，人们已经研究了nc-Si发光二极管（LED）作为下一代光子应用的有希望的光源。

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  • 来源
    《Advanced Materials》 |2010年第44期|p.5058-5062|共5页
  • 作者

    Chul Huh; Kyung-Hyun Kim; Bong Kyu Kim; Wanjoong Kim; Hyunsung Ko; Chel-Jong Choi; Gun Yong Sung;

  • 作者单位

    IT Convergence Technology Research Laboratory Electronics and Telecommunications Research Institute Daejeon 305-350 (Republic of Korea);

    IT Convergence Technology Research Laboratory Electronics and Telecommunications Research Institute Daejeon 305-350 (Republic of Korea);

    IT Convergence Technology Research Laboratory Electronics and Telecommunications Research Institute Daejeon 305-350 (Republic of Korea);

    IT Convergence Technology Research Laboratory Electronics and Telecommunications Research Institute Daejeon 305-350 (Republic of Korea);

    IT Convergence Technology Research Laboratory Electronics and Telecommunications Research Institute Daejeon 305-350 (Republic of Korea);

    Department of BIN Fusion Technology Chonbuk National University Jeonju 561-756 (Republic of Korea);

    IT Convergence Technology Research Laboratory Electronics and Telecommunications Research Institute Daejeon 305-350 (Republic of Korea);

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