In this article, the physico-chemical and electrochemical conditions of through-silicon via formation were studied. First, macropore arrays were etched through a low doped n-type silicon wafer by anodization under illumination into a hydrofluoric acid-based electrolyte. After electrochemical etching, ‘almost’ through-silicon macropores were locally opened by a backside photolithographic process followed by anisotropic etching. The 450 × 450-μm² opened areas were then selectively filled with copper by a potentiostatic electrochemical deposition. Using this process, high density conductive via (4.5 × 105 cm−²) was carried out. The conductive paths were then electrically characterized, and a resistance equal to 32 mΩ/copper-filled macropore was determined.
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机译：在本文中，研究了贯穿硅通孔形成的物理化学和电化学条件。首先，通过在照明下阳极氧化成氢氟酸基电解质，通过低掺杂n型硅晶片蚀刻大孔阵列。电化学蚀刻后，通过背面光刻工艺以及各向异性蚀刻在局部打开了“几乎”的硅直通孔。然后通过恒电位电化学沉积选择性地将450××450-μm²的开口区域填充铜。使用该工艺，进行了高密度导电通孔（4.5×10 5 cm -²）。然后对导电路径进行电学表征，并确定等于32mΩ/铜填充的大孔的电阻。
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