Microstructure of non-polar GaN on LiGaO2 grown by plasma-assisted MBE

机译：等离子体辅助MBE在LiGaO2上生长非极性GaN的微观结构

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We have investigated the structure of non-polar GaN, both on the M - and A-plane, grown on LiGaO2 by plasma-assisted molecular beam epitaxy. The epitaxial relationship and the microstructure of the GaN films are investigated by transmission electron microscopy (TEM). The already reported epi-taxial relationship and for M -plane GaN is confirmed. The main defects are threading dislocations and stacking faults in both samples. For the M -plane sample, the density of threading dislocations is around 1 × 10¹¹cm^-2and the stacking fault density amounts to approximately 2 × 10⁵cm^-1. In the A-plane sample, a threading dislocation density in the same order was found, while the stacking fault density is much lower than in the M -plane sample.

机译：我们已经研究了通过等离子体辅助分子束外延在LiGaO2上生长的M和A面上的非极性GaN的结构。通过透射电子显微镜（TEM）研究了GaN膜的外延关系和微观结构。证实了已经报道的外延关系以及对于M面GaN。两个样品中的主要缺陷是螺纹位错和堆垛层错。对于M平面样本，螺纹位错的密度约为1×10 ^{11 cm ^{-2 ，堆垛层错密度约为2×10 ^{5 cm ^{-1 。在A平面样品中，发现了相同顺序的螺纹位错密度，而堆垛层错密度却比M平面样品低得多。}}}}

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期刊名称 Nanoscale Research Letters
作者
Cheng-Hung Shih; Teng-Hsing Huang; Ralf Schuber; Yen-Liang Chen; Liuwen Chang; Ikai Lo; Mitch MC Chou; Daniel M Schaadt;
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作者单位

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年(卷),期 2011(6),1
年度 2011
页码 425
总页数 5
原文格式 PDF
正文语种
中图分类生化遗传学;生化药理学;
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专利

1. Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN-AIN buffer layer [J] . G. P. Dimitrakopulos, Th. Kehagias, A. Ajagunna, Physica status solidi . 2010,第5期

机译：使用薄的GaN-AIN缓冲层通过等离子体辅助MBE在Si（111）上生长的N面InN的微观结构
2. Optical and crystal properties of ammonia MBE-grown GaN layers on plasma-assisted MBE-grown AlN/Si (110) substrates [J] . Young-Kyun Noh, Chul-Hyun Park, Sang-Tae Lee, Current applied physics: the official journal of the Korean Physical Society . 2014,第Suppla1期

机译：等离子体辅助MBE生长的AlN / Si（110）衬底上氨MBE生长的GaN层的光学和晶体性质
3. Strain of M-plane GaN epitaxial layer grown on β-LiGaO2 (100) by plasma-assisted molecular beam epitaxy [J] . Shuo-Ting You, Ikai Lo, Huei-Jyun Shih, AIP Advances . 2018,第7期

机译：等离子体辅助分子束外延在β-LiGaO2（100）上生长的M面GaN外延层的应变
4. Microstructure of non-polar (11(2)0) and semi-polar (11(2)6) GaN films grown on R-plane sapphire by MBE [C] . Lin Zhou, David J.Smith, R.Chandrasekaran, The 12th International Beijing Conference and Exhibition on Instrumental Analysis : Conference Abstracts . 2007

机译：MBE在R面蓝宝石上生长的非极性（11（2）0）和半极性（11（2）6）GaN膜的微观结构
5. ZnO and Related Compounds and Quantum Well Structures Grown by Plasma-Assisted MBE. [D] . Zhao, Kuaile. 2014

机译：等离子体辅助MBE生长的ZnO及其相关化合物和量子阱结构。
6. Structure Shift of GaN Among Nanowall Network Nanocolumn and Compact Film Grown on Si (111) by MBE [O] . Aihua Zhong, Ping Fan, Yuanting Zhong, 2018

机译：通过MBE在Si（111）上生长的纳米壁网络纳米柱和致密膜之间的GaN结构变化
7. Microstructure of non-polar GaN on LiGaO2 grown by plasma-assisted MBE [O] . Cheng-Hung Shih, Teng-Hsing Huang, Ralf Schuber, 2011

机译：等离子体辅助MBE在LiGaO2上生长非极性GaN的微观结构
8. Effect of stoichiometry on defect distribution in cubic GaN grown on GaAs by plasma-assisted MBE [R] . Ruvimov, S. , Liliental-Weber, Z. , Washburn, J. , 1996

机译：化学计量学对等离子体辅助mBE生长在Gaas上立方GaN中缺陷分布的影响

Microstructure of non-polar GaN on LiGaO2 grown by plasma-assisted MBE

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