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首页> 美国卫生研究院文献>Nanoscale Research Letters >A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates
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A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates

机译：通过在误切的Si（001）衬底上进行自组装来制造GeSi纳米线的有希望的例程

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Very small and compactly arranged GeSi nanowires could self-assembled on vicinal Si (001) substrates with ~8° off toward ⟨110⟩ during Ge deposition. The nanowires were all oriented along the miscut direction. The small ration of height over width of the nanowire indicated that the nanowires were bordered partly with {1 0 5} facets. These self-assembled small nanowires were remarkably influenced by the growth conditions and the miscut angle of substrates in comparison with large dome-like islands obtained after sufficient Ge deposition. These results proposed that the formation of the nanowire was energetically driven under growth kinetic assistance. Three-dimensionally self-assembled GeSi nanowires were first realized via multilayer Ge growth separated with Si spacers. These GeSi nanowires were readily embedded in Si matrix and compatible with the sophisticated Si technology, which suggested a feasible strategy to fabricate nanowires for fundamental studies and a wide variety of applications.>PACS: 81.07.Gf, 81.16.Dn, 68.65.-k, 68.37.Ps
机译：极小且排列紧凑的GeSi纳米线可以在邻近的Si（001）衬底上自组装，并且在Ge沉积过程中朝⟨110°方向偏离约8°。纳米线均沿误切方向取向。纳米线的高度与宽度之比很小，表明纳米线部分与{1 0 5}面接壤。与自足的Ge沉积之后获得的大的圆顶状岛相比，这些自组装的小纳米线受衬底的生长条件和错切角的影响显着。这些结果表明，纳米线的形成在生长动力学辅助下受到能量驱动。三维自组装GeSi纳米线首先通过用Si隔离层分隔的多层Ge生长来实现。这些GeSi纳米线易于嵌入到Si基质中，并与复杂的Si技术兼容，这为制造用于基础研究和广泛应用的纳米线提供了可行的策略。> PACS： 81.07.Gf，81.16。 Dn，68.65.-k，68.37.Ps

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