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SnSe2 Quantum Dots: Facile Fabrication and Application in Highly Responsive UV-Detectors

机译:SnSe2量子点:易制造和在高响应紫外线检测器中的应用

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摘要

Synthesizing quantum dots (QDs) using simple methods and utilizing them in optoelectronic devices are active areas of research. In this paper, we fabricated SnSe2 QDs via sonication and a laser ablation process. Deionized water was used as a solvent, and there were no organic chemicals introduced in the process. It was a facile and environmentally-friendly method. We demonstrated an ultraviolet (UV)-detector based on monolayer graphene and SnSe2 QDs. The photoresponsivity of the detector was up to 7.5 × 106 mAW−1, and the photoresponse time was ~0.31 s. The n–n heterostructures between monolayer graphene and SnSe2 QDs improved the light absorption and the transportation of photocarriers, which could greatly increase the photoresponsivity of the device.
机译:使用简单的方法合成量子点(QD)并将其用于光电设备是研究的活跃领域。在本文中,我们通过超声和​​激光烧蚀工艺制造了SnSe2 QD。用去离子水作为溶剂,该过程中没有引入有机化学物质。这是一种简便且环保的方法。我们展示了基于单层石墨烯和SnSe2 QD的紫外线(UV)检测器。检测器的光响应度高达7.5×10 6 mAW -1 ,光响应时间约为0.31 s。单层石墨烯和SnSe2量子点之间的n–n异质结构改善了光吸收和光载流子的传输,可大大提高器件的光响应性。

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