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Rhenium Alloys as Ductile Substrates for Diamond Thin-Film Electrodes

机译:hen合金作为金刚石薄膜电极的延性基体

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摘要

Molybdenum-rhenium (Mo/Re) and tungsten-rhenium (W/Re) alloys were investigated as substrates for thin-film, polycrystalline boron-doped diamond electrodes. Traditional, carbide-forming metal substrates adhere strongly to diamond but lose their ductility during exposure to the high-temperature (1000°C) diamond, chemical vapor deposition environment. Boron-doped semi-metallic diamond was selectively deposited for up to 20 hours on one end of Mo/Re (47.5/52.5 wt.%) and W/Re (75/25 wt.%) alloy wires. Conformal diamond films on the alloys displayed grain sizes and Raman signatures similar to films grown on tungsten; in all cases, the morphology and Raman spectra were consistent with well-faceted, microcrystalline diamond with minimal sp2 carbon content. Cyclic voltammograms of dopamine in phosphate-buffered saline (PBS) showed the wide window and low baseline current of high-quality diamond electrodes. In addition, the films showed consistently well-defined, dopamine electrochemical redox activity. The Mo/Re substrate regions that were uncoated but still exposed to the diamond-growth environment remained substantially more flexible than tungsten in a bend-to-fracture rotation test, bending to the test maximum of 90° and not fracturing. The W/Re substrates fractured after a 27° bend, and the tungsten fractured after a 21° bend. Brittle, transgranular cleavage fracture surfaces were observed for tungsten and W/Re. A tension-induced fracture of the Mo/Re after the prior bend test showed a dimple fracture with a visible ductile core. Overall, the Mo/Re and W/Re alloys were suitable substrates for diamond growth. The Mo/Re alloy remained significantly more ductile than traditional tungsten substrates after diamond growth, and thus may be an attractive metal substrate for more ductile, thin-film diamond electrodes.
机译:研究了钼-(Mo / Re)和钨-(W / Re)合金作为薄膜,多晶掺硼金刚石电极的基底。传统的形成碳化物的金属基材牢固地粘附在金刚石上,但在暴露于高温(1000°C)金刚石化学气相沉积环境下会失去其延展性。硼掺杂的半金属金刚石在Mo / Re(47.5 / 52.5 wt。%)和W / Re(75/25 wt。%)合金线的一端选择性沉积长达20小时。合金上的保形金刚石薄膜显示出与钨上生长的薄膜相似的晶粒尺寸和拉曼特征。在所有情况下,形态和拉曼光谱都与切面细,微晶金刚石具有最小的sp 2 碳含量相一致。多巴胺在磷酸盐缓冲盐水(PBS)中的循环伏安图显示高质量金刚石电极的窗口宽且基线电流低。另外,这些膜表现出一致的良好定义的多巴胺电化学氧化还原活性。在弯曲至断裂旋转测试中,未涂覆但仍暴露在金刚石生长环境中的Mo / Re衬底区域仍然比钨具有更大的柔韧性,弯曲至最大90°的测试且没有断裂。 W / Re基板在弯曲27°后破裂,而钨在弯曲21°后破裂。观察到钨和钨/钨的脆性,经晶状卵裂的断裂面。在先前的弯曲试验后,Mo / Re的张力引起的断裂显示了带有可见延性芯的酒窝断裂。总体而言,Mo / Re和W / Re合金是金刚石生长的合适基底。 Mo / Re合金在金刚石生长后仍然比传统的钨基材具有更高的延展性,因此对于更具延展性的薄膜金刚石电极而言,Mo / Re合金可能是有吸引力的金属基材。

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