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Investigation of the Pd Nanoparticles-Assisted Chemical Etching of Silicon for Ethanol Solution Electrooxidation

机译：钯纳米粒子辅助化学腐蚀硅对乙醇溶液电氧化的研究

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The formation of porous silicon by Pd nanoparticles-assisted chemical etching of single-crystal Si with resistivity = 0.01 Ω·cm at 25 °C, 50 °C and 75 °C in HF/H O /H O solution was studied. Porous layers of silicon were studied by optical and scanning electron microscopy, and gravimetric analysis. It is shown that por-Si, formed by Pd nanoparticles-assisted chemical etching, has the property of ethanol electrooxidation. The chromatographic analysis of ethanol electrooxidation products on por-Si/Pd shows that the main products are CO , CH , H , CO, O , acetaldehyde (CHO) , methanol and water vapor. The mass activity of the por-Si/Pd system was investigated by measuring the short-circuit current in ethanol solutions. The influence of the thickness of porous silicon and wafer on the mass activity and the charge measured during ethanol electrooxidation was established. Additionally, the mechanism of charge transport during ethanol electrooxidation was established.

机译：研究了在25°C，50°C和75°C的HF / H O / H O溶液中，通过Pd纳米粒子辅助化学蚀刻电阻率为0.01Ω·cm的单晶硅形成多孔硅的过程。通过光学和扫描电子显微镜以及重量分析法研究了多孔硅层。结果表明，Pd纳米粒子辅助化学刻蚀形成的por-Si具有乙醇电氧化性能。乙醇电氧化产物在por-Si / Pd上的色谱分析表明，主要产物为CO，CH，H，CO，O，乙醛（CHO），甲醇和水蒸气。通过测量乙醇溶液中的短路电流来研究por-Si / Pd系统的质量活性。建立了多孔硅和晶片的厚度对质量活性和乙醇电氧化过程中测得的电荷的影响。此外，建立了乙醇电氧化过程中电荷传输的机制。

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期刊名称 Micromachines
作者
Olga Volovlikova; Gennady Silakov; Sergey Gavrilov; Tomasz Maniecki; Alexander Dudin;
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年(卷),期 2019(10),12
年度 2019
页码 -1
总页数 15
原文格式 PDF
正文语种
中图分类
关键词
porous silicon; Pd nanoparticles-assisted chemical etching; etching rate; ethanol electrooxidation;

机译：多孔硅;钯纳米粒子辅助化学刻蚀;刻蚀速率;乙醇电氧化;

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专利

1. Some Investigations on the Anisotropy of the Chemical Etching of(h?k?0)and(h?h?I)Silicon Plates in a NaOH 35% Solution. Part III: Determination of a Database for the Simulator Tensosim and Prediction of 2D Etching Shapes [J] . C. R.Telliera, C.Hodebourg, T. G.Leblois Active and passive electronic components . 2003,第2期

机译：在35％的NaOH溶液中对（h？k？0）和（h？h？I）硅片的化学刻蚀的各向异性进行一些研究。第三部分：确定用于仿真器Tensosim的数据库和2D蚀刻形状的预测
2. SOME INVESTIGATIONS ON THE ANISOTROPY OF THE CHEMICAL ETCHING OF (hkO) AND (hhl) SILICON PLATES IN A NaOH 35% SOLUTION. PART III: DETERMINATION OF A DATABASE FOR THE SIMULATOR TENSOSIM AND PREDICTION OF 2D ETCHING SHAPES [J] . C. R. TELLIER, C. HODEBOURG, T. G. LEBLOIS Active and Passive Electronic Components . 2003,第2期

机译：在（35％）NaOH溶液中对（hkO）和（hhl）硅板化学腐蚀的各向异性的一些研究。第三部分：确定仿真器TensoSIM的数据库并预测2D蚀刻形状
3. Some Investigations on the Anisotropy of the Chemical Etching of (h k 0) and (h hl) SiliconPlates in a NaOH 35% Solution. Part II: 3D Etching Shapes, Analysis and Comparison with KOH 56% [J] . C. R.Tellier, C. A.Hodebourg, S.Durand Active and passive electronic components . 2001,第4期

机译：关于在35％的NaOH溶液中（h k 0）和（h hl）硅化学腐蚀的各向异性的一些研究。第二部分：3D蚀刻形状，与KOH的分析和比较56％
4. Investigations Into the Electrochemical Etching Process of P-Type Silicon Using Ethanol-Surfactant Solutions [C] . Sivakumar Balakrishnan, Yurii K Gunko, Gerhard F Swiegers, International Conference on Energy Engineering and Smart Materials . 2017

机译：使用乙醇表面活性剂溶液对P型硅的电化学蚀刻过程的研究
5. The electrochemical etching of silicon in nonaqueous solutions. [D] . Rieger, Melissa Marie. 1997

机译：非水溶液中硅的电化学蚀刻。
6. Improved ethanol electrooxidation performance by shortening Pd–Ni active site distance in Pd–Ni–P nanocatalysts [O] . Lin Chen, Lilin Lu, Hengli Zhu, -1

机译：通过缩短Pd-Ni-P纳米催化剂中Pd-Ni的活性位点距离来改善乙醇的电氧化性能
7. Some Investigations on the Anisotropy of the Chemical Etching of (h k 0) and (h h I) Silicon Plates in a NaOH 35% Solution. Part III: Determination of a Database for the Simulator Tensosim and Prediction of 2D Etching Shapes [O] . C. R. Telliera, C. Hodebourg, T. G. Leblois 2003

机译：关于化学蚀刻各向异性的研究（Hķ0）和（我）硅片在NaOH 35％溶液中。第三部分：模拟器Tensosim数据库的确定和二维蚀刻形状的预测

Investigation of the Pd Nanoparticles-Assisted Chemical Etching of Silicon for Ethanol Solution Electrooxidation

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