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首页> 美国卫生研究院文献>Materials >Effect of Buffer Layer Capacitance on the Electrical Characteristics of Ferroelectric Polymer Capacitors and Field Effect Transistors
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Effect of Buffer Layer Capacitance on the Electrical Characteristics of Ferroelectric Polymer Capacitors and Field Effect Transistors

机译：缓冲层电容对铁电聚合物电容器电气特性的影响和场效应晶体管

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摘要

We demonstrated the effect of a buffer layer on the electrical characteristics of ferroelectric polymer capacitors and field-effect transistors. Various polymer materials with a dielectric constant between 2 and 42 were used to form buffer layers with a similar thicknesses, but with different capacitances. In order to evaluate the characteristics of the ferroelectrics with a buffer layer, the polarization–voltage characteristics of the capacitor, the transfer characteristics, and the retention characteristics of the transistors were investigated. As the capacitance of the buffer layer increased, high remnant polarization (Pr), high hysteresis, and long retention times were observed. Exceptionally, when poly(methylmethacrylate) and rigid poly(aryl ether) (poly(9,9-bis(4-hydroxyphenyl)fluorene-co-decafluorobiphenyl)) were used as the buffer layer, Pr had a value close to 0 in the dynamic measurement polarization–voltage (P–V) characteristic, but the quasi-static measurement transfer characteristic and the static measurement retention characteristic showed relatively high hysteresis and long retention times. Our study provides a scientific and technical basis for the design of ferroelectric memory and neuromorphic devices.
机译：我们证明了缓冲层对铁电聚合物电容器和场效应晶体管的电特性的影响。使用介电常数在2和42之间的各种聚合物材料用于形成具有相似厚度的缓冲层，但具有不同的电容。为了评价具有缓冲层的铁电器的特性，研究了电容器的偏振电压特性，传递特性和晶体管的保持特性。随着缓冲层的电容增加，观察到高残余偏振（PR），高滞后和长期保留时间。特别地，当使用聚（甲基丙烯酸甲酯）和刚性聚（芳基醚）（聚（9,9-双苯基）芴 - 共二氟双氟硼烯基）作为缓冲层时，PR的值接近0动态测量偏振 - 电压（P-V）特性，但准静态测量转移特性和静态测量保持特性显示出相对高的滞后和长期保留时间。我们的研究为铁电记忆和神经形态器件设计提供了科学和技术基础。

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