• 主题
高级搜索  >
历史搜索 清空历史
首页> 美国卫生研究院文献>Materials >Stress and Microstructure Evolution in Mo Thin Films without or with Cover Layers during Thermal-Cycling
【2h】

Stress and Microstructure Evolution in Mo Thin Films without or with Cover Layers during Thermal-Cycling

机译：莫薄膜的应力和微观结构演化覆盖层在热循环期间

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The intrinsic stress behavior and microstructure evolution of Molybdenum thin films were investigated to evaluate their applicability as a metallization in high temperature microelectronic devices. For this purpose, 100 nm thick Mo films were sputter-deposited without or with an AlN or SiO2 cover layer on thermally oxidized Si substrates. The samples were subjected to thermal cycling up to 900 °C in ultrahigh vacuum; meanwhile, the in-situ stress behavior was monitored by a laser based Multi-beam Optical Sensor (MOS) system. After preannealing at 900 °C for 24 h, the uncovered films showed a high residual stress at room temperature and a plastic behavior at high temperatures, while the covered Mo films showed an almost entirely elastic deformation during the thermal cycling between room temperature and 900 °C with hardly any plastic deformation, and a constant stress value during isothermal annealing without a notable creep. Furthermore, after thermal cycling, the Mo films without as well as with a cover layer showed low electrical resistivity (≤10 μΩ·cm).
机译：研究了钼薄膜的内在应力行为和微观结构演化，以评估它们在高温微电子器件中的金属化的适用性。为此目的，在热氧化的Si衬底上溅射沉积100nm厚的Mo膜而没有或用AlN或SiO 2覆盖层溅射。将样品在超高真空中进行高达900℃的热循环;同时，由基于激光的多光束光学传感器（MOS）系统监测原位应力行为。在900℃下进行900℃后，未覆盖的薄膜在室温下呈高残余应力和高温下的塑料行为，而覆盖的MO膜在室温和900°之间的热循环期间显示出几乎完全的弹性变形。 C几乎没有任何塑性变形，在等温退火过程中的恒定应力值没有值得注意的蠕变。此外，在热循环之后，MO膜没有以及覆盖层的电阻率低（≤10μΩ·cm）。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号