• 主题
高级搜索  >
历史搜索 清空历史
首页> 美国卫生研究院文献>Sensors (Basel Switzerland) >A Modeling and Feasibility Study of a Micro-Machined Microphone Based on a Field-Effect Transistor and an Electret for a Low-Frequency Microphone
【2h】

A Modeling and Feasibility Study of a Micro-Machined Microphone Based on a Field-Effect Transistor and an Electret for a Low-Frequency Microphone

机译：基于场效应晶体管和低频麦克风的驻极体的微机器麦克风的建模与可行性研究

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Miniaturized capacitive microphones often show sensitivity degradation in the low-frequency region due to electrical and acoustical time constants. For low-frequency sound detection, conventional systems use a microphone with a large diaphragm and a large back chamber to increase the time constant. In order to overcome this limitation, an electret gate on a field-effect transistor (ElGoFET) structure was proposed, which is the field-effect transistor (FET) mounted diaphragm faced on electret. The use of the sensing mechanism consisting of the integrated FET and electret enables the direct detection of diaphragm displacement, which leads its acoustic senor application (ElGoFET microphone) and has a strong ability to detect low-frequency sound. We studied a theoretical model and design for low-frequency operation of the ElGoFET microphone prototype. Experimental investigations pertaining to the design, fabrication, and acoustic measurement of the microphone were performed and the results were compared to our analytical predictions. The feasibility of the microphone as a low-frequency micro-electromechanical system (MEMS) microphone, without the need for a direct current bias voltage (which is of particular interest for applications requiring miniaturized components), was demonstrated by the flat-band frequency response in the low-frequency region.
机译：小型化电容式麦克风通常会引起电气和声学时间常数的低频区域中的敏感性劣化。对于低频声音检测，传统系统使用具有大隔膜的麦克风和大后室以增加时间常数。为了克服这种限制，提出了在场效应晶体管（ELGOFET）结构上的驻极栅极，其是面对驻极体上的场效应晶体管（FET）的膜片。使用由集成FET和驻极体组成的传感机构可以直接检测隔膜位移，这引发了其声学传感器应用（Elgofet麦克风）并且具有较强的检测低频声音的能力。我们研究了Elgofet麦克风原型的低频操作理论模型和设计。进行了与设计，制造和声学测量有关的实验研究，并将结果与​​我们的分析预测进行了比较。通过平带频率响应证明了麦克风作为低频微机电系统（MEMS）麦克风（MEMS）麦克风的可行性而不需要直流偏置电压（对于需要小型化组分的应用特别令人兴趣）在低频区域。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号