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Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au Pd Pt Cu and Ir

机译：使用使用AuPdPtCu和IR和IR和IR的MACE方法自对准高纵横比硅3D结构的晶圆级集成

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摘要

The wafer-level integration of high aspect ratio silicon nanostructures is an essential part of the fabrication of nanodevices. Metal-assisted chemical etching (MACE) is a promising low-cost and high-volume technique for the generation of vertically aligned silicon nanowires. Noble metal nanoparticles were used to locally etch the silicon substrate. This work demonstrates a bottom-up self-assembly approach for noble metal nanoparticle formation and the subsequent silicon wet etching. The macroscopic wafer patterning has been done by using a poly(methyl methacrylate) masking layer. Different metals (Au, Pt, Pd, Cu, and Ir) were investigated to derive a set of technologies as platform for specific applications. Especially, the shape of the 3D structures and the resulting reflectance have been investigated. The Si nanostructures fabricated using Au nanoparticles show a perfect light absorption with a reflectance below 0.3%. The demonstrated technology can be integrated into common fabrication processes for microelectromechanical systems.

机译：高纵横比硅纳米结构的晶片级集成是纳米型制造的必要部分。金属辅助化学蚀刻（MACE）是一种很有希望的低成本和高容量技术，用于产生垂直对齐的硅纳米线。使用贵金属纳米颗粒用于局部蚀刻硅衬底。这项工作显示了贵金属纳米粒子形成和随后的硅湿法蚀刻的自下而上的自组装方法。已经通过使用聚（甲基丙烯酸甲酯）掩模层来完成宏观晶片图案化。研究了不同的金属（AU，PT，PD，Cu和IR），以导出一组技术作为特定应用的平台。特别是，研究了3D结构的形状和所得到的反射率。使用Au纳米粒子制造的Si纳米结构显示出完美的光吸收，反射率低于0.3％。所示技术可以集成到微机电系统的共同制造工艺中。

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期刊名称 Beilstein Journal of Nanotechnology
作者
Mathias Franz; Romy Junghans; Paul Schmitt; Adriana Szeghalmi; Stefan E Schulz;
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作者单位

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年(卷),期 2020(-1),-1
年度 2020
页码 -1
总页数 11
原文格式 PDF
正文语种
中图分类生化遗传学;生化药理学;
关键词

机译：黑色硅;自下而上;金属辅助化学蚀刻（钉子）;纳米线;晶圆级集成;

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专利

1. Implementation of silicon-on-glass MEMS devices with embedded through-wafer silicon vias using the glass reflow process for wafer-level packaging and 3D chip integration [J] . Lin CW, Hsu CP, Yang HA, Journal of Micromechanics and Microengineering . 2008,第2期

机译：使用玻璃回流工艺实现具有嵌入式晶圆通孔的玻璃上硅MEMS器件，用于晶圆级封装和3D芯片集成
2. Implementation of silicon-on-glass MEMS devices with embedded through-wafer silicon vias using the glass reflow process for wafer-level packaging and 3D chip integration [J] . Chiung-Wen Lin, Chia-Pao Hsu, Hsueh-An Yang, Journal of Micromechanics and Microengineering . 2008,第2期

机译：使用玻璃回流工艺实现具有嵌入式晶圆通孔的玻璃上硅MEMS器件，用于晶圆级封装和3D芯片集成
3. Effects of surface treatment on the bonding quality of wafer-level Cu-to-Cu thermo-compression bonding for 3D integration [J] . J. Fan, D. F. Lim, C. S. Tan Journal of Micromechanics and Microengineering . 2013,第4期

机译：表面处理对3D集成晶圆级Cu-Cu热压键合键合质量的影响
4. Injection Metal-Assisted Catalytic Etching (MACE) of Si Powder: Discovery of Low-Load MACE and Pore Distribution Tunability Using Ag, Au, Pd, Pt and Cu Catalysts [C] . Kurt W Kolasinski, Konstantin Tamarov, Joseph D. Swanson, Pacific Rim Meeting on Electrochemical and Solid-State Science . 2020

机译：Si粉末注射金属辅助催化蚀刻（圆柱）：使用Ag，Au，Pd，Pt和Cu催化剂发现低负荷均衡和孔隙分布可调性
5. Self-Aligned Wafer-Level Integration Technology (SAWLIT) with high density interconnects for RF and optoelectronics application [D] . Sharifi, Hasan 2007

机译：具有高密度互连的自对准晶圆级集成技术（SAWLIT），用于RF和光电应用
6. Synthesis Superoxide Dismutase Mimetic and Anticancer Activities of Metal Complexes of 22-Dimethylpentanedioic Acid(2dmepdaH2) and 33-Dimethylpentanedioic acid(3dmepdaH2): X-Ray Crystal Structures of Cu(3dmepda)(bipy)2· 6H2O and Cu(2dmepda)(bipy)(EtOH)2· 4EtOH(bipy = 22′Bipyridine) [O] . Michael Devereux, Malachy McCann, Denis OShea, 2006

机译：22-二甲基戊二酸（2dmepdaH2）和33-二甲基戊二酸（3dmepdaH2）的金属配合物的合成超氧化物歧化酶模拟和抗癌活性：Cu（3dmepda）（bipy） 2·6H2O的X射线晶体结构和Cu（2dmepda）（bipy）（EtOH） 2·4EtOH（Bipy = 22联吡啶）
7. Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir [O] . Mathias Franz, Romy Junghans, Paul Schmitt, 2020

机译：使用使用Au，Pd，Pt，Cu和IR和IR和IR的MACE方法自对准高纵横比硅3D结构的晶圆级集成

Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au Pd Pt Cu and Ir

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