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首页> 美国卫生研究院文献>Nanomaterials >CMOS-Compatible and Low-Cost Thin Film MACE Approach for Light-Emitting Si NWs Fabrication
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CMOS-Compatible and Low-Cost Thin Film MACE Approach for Light-Emitting Si NWs Fabrication

机译：CMOS兼容和低成本的薄膜旋转胶片术方法用于发光Si NWS制造

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Silicon nanowires (Si NWs) are emerging as an innovative building block in several fields, such as microelectronics, energetics, photonics, and sensing. The interest in Si NWs is related to the high surface to volume ratio and the simpler coupling with the industrial flat architecture. In particular, Si NWs emerge as a very promising material to couple the light to silicon. However, with the standard synthesis methods, the realization of quantum-confined Si NWs is very complex and often requires expensive equipment. Metal-Assisted Chemical Etching (MACE) is gaining more and more attention as a novel approach able to guarantee high-quality Si NWs and high density with a cost-effective approach. Our group has recently modified the traditional MACE approach through the use of thin metal films, obtaining a strong control on the optical and structural properties of the Si NWs as a function of the etching process. This method is Complementary Metal-Oxide-Semiconductors (CMOS)-technology compatible, low-cost, and permits us to obtain a high density, and room temperature light-emitting Si NWs due to the quantum confinement effect. A strong control on the Si NWs characteristics may pave the way to a real industrial transfer of this fabrication methodology for both microelectronics and optoelectronics applications.
机译：硅纳米线（Si NWS）是在几个领域的创新构建块，例如微电子，能量，光子学和传感。 Si NWS的兴趣与高度与体积比以及与工业平面建筑的更简单的耦合有关。特别是，Si NWS作为一种非常有希望的材料来将光耦合到硅。然而，通过标准合成方法，量子密闭的Si NWS的实现非常复杂并且通常需要昂贵的设备。金属辅助化学蚀刻（MACE）作为一种能够以经济高效的方法保证高质量的SI NWS和高密度的新方法，越来越多地受到更高的关注。本集团最近通过使用薄金属薄膜修改了传统的术术方法，在Si NWS的光学和结构特性上获得了强的控制，作为蚀刻工艺的函数。该方法是互补的金属氧化物 - 半导体（CMOS） - 技术兼容，低成本，并且由于量子限制效果，我们获得高密度，并且室温发光Si NWS。对Si NWS特性的强大控制可以为微电子和光电子应用铺平这种制造方法的实际工业转移。

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