Large-area high-quality graphene was synthesized on different types of copper foils preannealed under positive pressure H2 atmosphere between 1 and 2 standard atmospheres. The prepared graphene showed good electrical conductivity, transmittance, and uniformity. The sheet resistance values of the grown monolayer graphene film were all about 500 Ω/□, and the transmittance was as high as 97.24%. The carrier mobility of the monolayer graphene film was around 2000–3000 cm2/(V s). Furthermore, the monolayer coverage could be more than 95.00% controlled by adjusting the process parameters. The properties of the four layer-superposed graphene film nearly reached that of the commercialized indium tin oxide (ITO) glasses, which showed that the prepared graphene could be well applied to the transparent conductive electrode. The obtained graphene film has been used to construct Si/graphene solar cells without an antireflection film, which showed energy conversion efficiency among 4.99–5.62%.
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机译：在1-2个标准大气压的正压H2气氛下，对不同类型的铜箔进行了预退火，从而得到了大面积的优质石墨烯。制备的石墨烯显示出良好的导电性，透射率和均匀性。生长的单层石墨烯膜的薄层电阻值均为约500Ω/□，并且透射率高达97.24％。单层石墨烯薄膜的载流子迁移率约为2000–3000 cm 2 /（V s）。此外，通过调整工艺参数可以控制单层覆盖率超过95.00％。四层叠加石墨烯薄膜的性能几乎达到了商品化的铟锡氧化物（ITO）玻璃的性能，这表明所制备的石墨烯可以很好地应用于透明导电电极。所获得的石墨烯膜已被用于构建不具有减反射膜的Si /石墨烯太阳能电池，其能量转换效率为4.99％至5.62％。
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