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首页> 美国卫生研究院文献>International Journal of Nanomedicine >Significance of postgrowth processing of ZnO nanostructures on antibacterial activity against gram-positive and gram-negative bacteria
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Significance of postgrowth processing of ZnO nanostructures on antibacterial activity against gram-positive and gram-negative bacteria

机译：ZnO纳米结构的生长后处理对革兰氏阳性和革兰氏阴性细菌的抗菌活性的意义

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摘要

In this work, we highlighted the effect of surface modifications of one-dimensional (1D) ZnO nanostructures (NSs) grown by the vapor–solid mechanism on their antibacterial activity. Two sets of ZnO NSs were modified separately – one set was modified by annealing in an Ar environment, and the second set was modified in O2 plasma. Annealing in Ar below 800°C resulted in a compressed lattice, which was due to removal of Zn interstitials and increased O vacancies. Annealing above 1,000°C caused the formation of a new prominent phase, Zn2SiO4. Plasma oxidation of the ZnO NSs caused an expansion in the lattice due to the removal of O vacancies and incorporation of excess O. Photoluminescence (PL) spectroscopy was employed for the quantification of defects associated with Zn and O in the as-grown and processed ZnO NS. Two distinct bands were observed, one in the ultraviolet (UV) region, due to interband transitions, and other in the visible region, due to defects associated with Zn and O. PL confirmed the surface modification of ZnO NS, as substantial decrease in intensities of visible band was observed. Antibacterial activity of the modified ZnO NSs demonstrated that the surface modifications by Ar annealing limited the antibacterial characteristics of ZnO NS against Staphylococcus aureus. However, ZnO NSs annealed at 1,000°C or higher showed a remarkable antibacterial activity against Escherichia coli. O2 plasma–treated NS showed appreciable antibacterial activity against both E. coli and S. aureus. The minimum inhibition concentration was determined to be 0.5 mg/mL and 1 mg/mL for Ar-annealed and plasma-oxidized ZnO NS, respectively. It was thus proved that the O content at the surface of the ZnO NS was crucial to tune the antibacterial activity against both selected gram-negative (E. coli) and gram-positive (S. aureus) bacterial species.
机译：在这项工作中，我们强调了通过气固机理生长的一维（1D）ZnO纳米结构（NSs）的表面修饰对其抗菌活性的影响。分别对两组ZnO NS进行了修饰-一组在Ar环境中通过退火进行修饰，而第二组在O2等离子体中进行了修饰。在低于800°C的Ar中退火会导致压缩晶格，这是由于去除了Zn间隙和增加了O空位。在1,000°C以上退火导致形成新的突出相Zn2SiO4。 ZnO NSs的等离子体氧化由于去除了O空位和引入了过量的O而导致晶格膨​​胀。光致发光（PL）光谱用于定量确定生长和加工后的ZnO中与Zn和O有关的缺陷NS。观察到两个不同的谱带，一个是由于带间跃迁而在紫外线（UV）区域，另一个是由于与Zn和O有关的缺陷而在可见光区域。PL证实了ZnO NS的表面改性，因为强度大大降低了。观察到可见光带的宽度。修饰的ZnO NSs的抗菌活性表明，通过Ar退火进行的表面修饰限制了ZnO NS对金黄色葡萄球菌的抗菌特性。但是，在1,000°C或更高温度下退火的ZnO NSs对大肠杆菌表现出显着的抗菌活性。 O2血浆处理过的NS对大肠杆菌和金黄色葡萄球菌均表现出明显的抗菌活性。 Ar退火和等离子体氧化的ZnO NS的最小抑制浓度分别确定为0.5 mg / mL和1 mg / mL。因此证明，ZnO NS表面的O含量对于调节针对所选革兰氏阴性菌（大肠杆菌）和革兰氏阳性菌（金黄色葡萄球菌）的抗菌活性至关重要。

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