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Phase-Change Memory: An Architectural Perspective

机译：相变存储器：架构视角

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摘要

This article surveys the current state of phase-change memory (PCM) as a nonvolatile memory technology set to replace flash and DRAM in modern computerized systems. It has been researched and developed in the last decade, with researchers providing better architectural designs which address the technology's main challenges-its limited write endurance, potential long latency, high energy writes, power dissipation, and some concerns for memory privacy. Some physical properties of the technology are also discussed, providing a basis for architectural discussions. Also briefly shown are other architectural alternatives, such as FeRAM and MRAM. The designs surveyed in this article include read before write, wear leveling, write cancellation, write pausing, some encryption schemes, and buffer organizations. These allow PCM to stand on its own as a replacement for DRAM as main memory. Designs for hybrid memory systems with both PCM and DRAM are also shown and some designs for SSDs incorporating PCM.
机译：本文概述了相变存储器（PCM）作为一种非易失性存储器技术的现状，该技术将替代现代计算机系统中的闪存和DRAM。它在过去十年中得到了研究和开发，研究人员提供了更好的体系结构设计，以应对该技术的主要挑战-有限的写入耐力，潜在的长等待时间，高能量写入，功耗以及对内存隐私的某些担忧。还讨论了该技术的某些物理属性，为体系结构讨论提供了基础。还简要显示了其他架构替代方案，例如FeRAM和MRAM。本文调查的设计包括写前读取，损耗均衡，写取消，写暂停，某些加密方案和缓冲区组织。这些使PCM可以自己代替DRAM作为主存储器。还显示了同时具有PCM和DRAM的混合存储系统的设计，以及一些包含PCM的SSD的设计。

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