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Low-Temperature-Processed Colloidal Quantum Dots as Building Blocks for Thermoelectrics

机译：低温处理的胶体量子点作为热电的基础

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摘要

Colloidal quantum dots (CQDs) are demonstrated to be promising materials to realize high-performance thermoelectrics owing to their low thermal conductivity. The most studied CQD films, however, are using long ligands that require high processing and operation temperature (400 degrees C) to achieve optimum thermoelectric performance. Here the thermoelectric properties of CQD films cross-linked using short ligands that allow strong inter-QD coupling are reported. Using the ligands, p-type thermoelectric solids are demonstrated with a high Seebeck coefficient and power factor of 400 mu V K-1 and 30 mu W m(-1) K-2, respectively, leading to maximum ZT of 0.02 at a lower measurement temperature (400 K) and lower processing temperature (300 degrees C). These ligands further reduce the annealing temperature to 175 degrees C, significantly increasing the Seebeck coefficient of the CQD films to 580 V K-1. This high Seebeck coefficient with a superior ZT near room temperature compared to previously reported high temperature-annealed CQD films is ascribed to the smaller grain size, which enables the retainment of quantum confinement and significantly increases the hole effective mass in the films. This study provides a pathway to approach quantum confinement for achieving a high Seebeck coefficient yet strong inter-QD coupling, which offers a step toward low-temperature-processed high-performance thermoelectric generators.
机译：胶体量子点（CQD）由于导热系数低而被证明是实现高性能热电学的有前途的材料。但是，研究最多的CQD膜使用的长配体需要较高的加工和操作温度（> 400摄氏度）才能达到最佳的热电性能。此处报道了使用允许强QD间偶联的短配体交联的CQD薄膜的热电性能。使用这些配体，p型热电固体的塞贝克系数和功率因数分别达到400μV K-1和30μW m（-1）K-2，在较低的温度下最大ZT为0.02。测量温度（<400 K）和较低的处理温度（<300摄氏度）。这些配体将退火温度进一步降低至175摄氏度，从而将CQD薄膜的塞贝克系数显着提高至580 V K-1。与先前报道的高温退火的CQD薄膜相比，这种在室温附近具有较高ZT的高Seebeck系数归因于较小的晶粒尺寸，这使得能够保留量子限制并显着增加了薄膜中的空穴有效质量。这项研究为实现高塞贝克系数和强QD间耦合提供了一种量子限制的途径，这为向低温处理的高性能热电发电机迈出了一步。

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