Fill Factor Losses in Cu_2ZnSn(S_xSe_1-x)_4 Solar Cells: Insights from Physical and Electrical Characterization of Devices and Exfoliated Films

Tai Kong Fai; Gunawan Oki; Kuwahara Masaru; Chen Shi; Mhaisalkar Subodh Gautam; Huan Cheng Hon Alfred; Mitzi David B.

首页> 外文期刊>Advanced energy materials >Fill Factor Losses in Cu_2ZnSn(S_xSe_1-x)_4 Solar Cells: Insights from Physical and Electrical Characterization of Devices and Exfoliated Films

【24h】

Fill Factor Losses in Cu_2ZnSn(S_xSe_1-x)_4 Solar Cells: Insights from Physical and Electrical Characterization of Devices and Exfoliated Films

机译：Cu_2zNSN（S_XSE_1-X）_4太阳能电池中的填充因子损耗：从设备和剥离薄膜的物理和电气表征的见解

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Besides the open circuit voltage (V-OC) deficit, fill factor (FF) is the second most significant parameter deficit for earth-abundant kesterite solar cell technology. Here, various pathways for FF loss are discussed, with focus on the series resistance issue and its various contributing factors. Electrical and physical characterizations of the full range of bandgap (E-g = 1.0-1.5 eV) Cu2ZnSn(SxSe1-x)(4) (CZTSSe) devices, as well as bare and exfoliated films with various S/(S + Se) ratios, are performed. High intensity Suns-V-OC measurement indicates a nonohmic junction developing in high bandgap CZTSSe. Grazing incidence X-ray diffraction, Raman mapping, field emission scanning electron microscopy, and X-ray photoelectron spectroscopy indicate the formation of Sn(S,Se)(2), Mo(S,Se)(2), and Zn(S,Se) at the high bandgap CZTSSe/Mo interface, contributing to the increased series resistance (R-S) and nonohmic back contact characteristics. This study offers some clues as to why the record-CZTSSe solar cells occur within a bandgap range centered around 1.15 eV and offers some direction for further optimization.

机译：除了开路电压（V-OC）缺陷外，填充因子（FF）是地球 - 丰富的kesterite太阳能电池技术的第二个最重要的参数缺陷。这里，讨论了用于FF损耗的各种途径，重点是串联阻力问题及其各种贡献因素。具有各种S /（S + SE）比的全系列带隙（例如= 1.0-1.5eV）CU2ZNSN（SXSE1-X）（4）（CZTSSE）装置（CZTSSE）（CZTSSE）的薄膜的电气和物理特征，执行。高强度Suns-V-OC测量表示在高带隙CZTSSE中产生的非潜在结。放牧入射X射线衍射，拉曼映射，场发射扫描电子显微镜和X射线光电子能谱表明Sn（S Se）（2），Mo（SE，Se）（2）和Zn的形成形成（S ，SE）在高带隙CZTSSE / MO接口，有助于增加串联电阻（RS）和非致背接触特性。本研究提供了一些线索，为什么记录-CZTSSE太阳能电池发生在带隙范围内，该范围为1.15 EV，并提供一些方向进行进一步优化。

著录项

来源
《Advanced energy materials》 |2016年第3期|1501609.1-1501609.10|共10页
作者
Tai Kong Fai; Gunawan Oki; Kuwahara Masaru; Chen Shi; Mhaisalkar Subodh Gautam; Huan Cheng Hon Alfred; Mitzi David B.;
展开▼
作者单位

Nanyang Technol Univ Sch Phys & Math Sci Div Phys & Appl Phys 21 Nanyang Link Singapore 637371 Singapore|Energy Res Inst NTU ERI N Res Techno Plaza Level 5 50 Nanyang Dr Singapore 639798 Singapore;

IBM Corp TJ Watson Res Ctr Dept Phys Sci 1101 Kitchawan Rd Yorktown Hts NY 10598 USA;

Tokyo Ohka Kogyo Co Ltd Nakahara Ku 150 Nakamaruko Kawasaki Kanagawa 2110012 Japan;

Nanyang Technol Univ Sch Phys & Math Sci Div Phys & Appl Phys 21 Nanyang Link Singapore 637371 Singapore;

Energy Res Inst NTU ERI N Res Techno Plaza Level 5 50 Nanyang Dr Singapore 639798 Singapore;

Nanyang Technol Univ Sch Phys & Math Sci Div Phys & Appl Phys 21 Nanyang Link Singapore 637371 Singapore;

Duke Univ Durham NC 27708 USA;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词
solar cells; fill factors; nonohmic back contact; secondary phases formation; series resistance;

机译：太阳能电池;填充因子;非潜能背面;二次阶段形成;串联电阻;

相似文献

外文文献
中文文献
专利

1. Electrical Characterization of MIS Devices Using PECVD SiN_x:H Films for Application of Silicon Solar Cells [J] . Jin-Su Yoo, Jun-Sik CHO, Joo-Hyung PARK, Journal of the Korean Physical Society . 2012,第1期

机译：使用PECVD SiN_x：H膜的MIS器件的电学表征用于硅太阳能电池
2. Intermixing at the absorber-buffer layer interface in thin-film solar cells: The electronic effects of point defects in Cu(In,Ga)(Se,S)_2 and Cu_2ZnSn(Se,S)_4 devices [J] . J. B. Varley, V. Lordi Journal of Applied Physics . 2014,第6期

机译：薄膜太阳能电池吸收体-缓冲层界面处的混合：Cu（In，Ga）（Se，S）_2和Cu_2ZnSn（Se，S）_4器件中点缺陷的电子效应
3. Revisiting lifetimes from transient electrical characterization of thin film solar cells; a capacitive concern evaluated for silicon, organic and perovskite devices [J] . Kiermasch David, Baumann Andreas, Fischer Mathias, Energy & environmental science . 2018,第3期

机译：回顾薄膜太阳能电池瞬态电特性的寿命；评估了硅，有机和钙钛矿器件的电容问题
4. Numerical simulations of triple-junction GaInP/GaAs/Ge solar cells to provide insight into fill-factor losses at high concentration [C] . Kanevce Ana, Olson Jerry M., Metzger Wyatt K. 35th IEEE Photovoltaic Specialists Conference . 2010

机译：三结GaInP / GaAs / Ge太阳能电池的数值模拟，可洞悉高浓度下的填充因子损耗
5. Electrical characterization of thermally and mechanically exfoliated silicon films for flat panel display applications. [D] . Lu, Felix Paul. 2004

机译：用于平板显示器的热剥离和机械剥离的硅膜的电学特性。
6. Electrochemically Deposited NiO Films as a Blocking Layer in p-Type Dye-Sensitized Solar Cells with an Impressive 45 Fill Factor [O] . Matteo Bonomo, Diego Di Girolamo, Marco Piccinni, 2020

机译：电化学沉积的NiO膜作为p型染料敏化太阳能电池中的阻挡层其填充系数高达45％
7. Thiazole-Induced Surface Passivation and Recrystallization of CH3NH3PbI3 Films for Perovskite Solar Cells with Ultrahigh Fill Factors [O] . -1

机译：具有超高填充因子的Perovskite太阳能电池CH3NH3PBI3薄膜的噻唑诱导的表面钝化和再结晶

Fill Factor Losses in Cu_2ZnSn(S_xSe_1-x)_4 Solar Cells: Insights from Physical and Electrical Characterization of Devices and Exfoliated Films

摘要

著录项

相似文献

相关主题

期刊订阅