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Understanding the Doping Effect on NiO: Toward High-Performance Inverted Perovskite Solar Cells

机译:了解掺杂对NiO的影响:高性能反相钙钛矿太阳能电池

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摘要

High-quality hole transport layers are prepared by spin-coating copper doped nickel oxide (Cu:NiO) nanoparticle inks at room temperature without further processing. In agreement with theoretical calculations predicting that Cu doping results in acceptor energy levels closer to the valence band maximum compared to gap states of nickel vacancies in undoped NiO, an increase in the conductivity in Cu:NiO films compared to NiO is observed. Cu in Cu:NiO can be found in both Cu+ and Cu2+ states, and the substitution of Ni2+ with Cu+ contributes to both increased carrier concentration and carrier mobility. In addition, the films exhibit increased work function, which together with the conductivity increase, enables improved charge transfer and extraction. Furthermore, recombination losses due to lower monomolecular Shockley-Read-Hall recombination are reduced. These factors result in an improvement of all photovoltaic performance parameters and consequently an increased efficiency of the inverted planar perovskite solar cells. A power conversion efficiency (PCE) exceeding 20% could be achieved for small-area devices, while PCE values of 17.41 and 18.07% are obtained for flexible devices and large area (1 cm(2)) devices on rigid substrates, respectively.
机译:通过在室温下旋涂掺杂铜的氧化镍(Cu:NiO)纳米颗粒墨水,无需进一步处理即可制备高质量的空穴传输层。与理论计算相一致,理论计算预测,与未掺杂的NiO中的镍空位的能隙状态相比,Cu掺杂会使受体能级更接近价带最大值,观察到与NiO相比,Cu:NiO薄膜的电导率增加。 Cu:NiO中的Cu可以同时处于Cu +和Cu2 +状态,并且将Ni2 +替换为Cu +有助于增加载流子浓度和载流子迁移率。另外,这些膜表现出增加的功函数,其与电导率的增加一起使得能够改善电荷转移和提取。此外,减少了由于较低的单分子Shockley-Read-Hall重组引起的重组损失。这些因素导致所有光伏性能参数的改善,并因此提高了倒置平面钙钛矿太阳能电池的效率。对于小面积设备,可以实现超过20%的功率转换效率(PCE),而对于刚性衬底上的柔性设备和大面积(1 cm(2))设备,其PCE值分别为17.41和18.07%。

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  • 来源
    《Advanced energy materials》 |2018年第19期|1703519.1-1703519.10|共10页
  • 作者单位

    Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China;

    Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China;

    Southern Univ Sci & Technol China, Dept Phys, MCPC, Shenzhen 518055, Peoples R China;

    Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China;

    Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China;

    Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China;

    Hong Kong Polytech Univ, Dept Elect & Informat Engn, Kowloon, Hong Kong, Peoples R China;

    Hong Kong Polytech Univ, Dept Elect & Informat Engn, Kowloon, Hong Kong, Peoples R China;

    Univ Hong Kong, Dept Chem, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China;

    Southern Univ Sci & Technol, Shenzhen Key Lab Full Spectral Solar Elect Genera, Dept Mat Sci & Engn, 1088 Xueyuan Rd, Shenzhen 518055, Guangdong, Peoples R China;

    Southern Univ Sci & Technol, Shenzhen Key Lab Full Spectral Solar Elect Genera, Dept Mat Sci & Engn, 1088 Xueyuan Rd, Shenzhen 518055, Guangdong, Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    copper doping; DFT calculations; flexible solar cells; nickel oxide; organometallic halide perovskites;

    机译:铜掺杂;DFT计算;柔性太阳能电池;氧化镍;有机金属卤化物钙钛矿;

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