A Monolithically Integrated InGaN Nanowire/Si Tandem Photoanode Approaching the Ideal Bandgap Configuration of 1.75/1.13 eV

Fan Shizhao; Shih Ishiang; Mi Zetian

首页> 外文期刊>Advanced energy materials >A Monolithically Integrated InGaN Nanowire/Si Tandem Photoanode Approaching the Ideal Bandgap Configuration of 1.75/1.13 eV

【24h】

A Monolithically Integrated InGaN Nanowire/Si Tandem Photoanode Approaching the Ideal Bandgap Configuration of 1.75/1.13 eV

机译：接近1.75 / 1.13 eV理想带隙配置的单片集成InGaN纳米线/ Si串联光电阳极

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Indium gallium nitride (InGaN) nanowire arrays (Eg approximate to 1.75 eV) are monolithically integrated on a Si solar cell through a Si tunnel junction. With such a nearly ideal energy bandgap configuration, a saturated photocurrent density of 16.3 mA cm-2 is achieved under AM1.5G one sun illumination. The applied-biasphoton- to-current efficiency reaches 8.3% at 0.5 V versus normal hydrogen electrode.

机译：氮化铟镓（InGaN）纳米线阵列（例如，大约1.75 eV）通过Si隧道结单片集成在Si太阳能电池上。通过这种近乎理想的能带隙配置，在AM1.5G一次阳光照射下，可实现16.3 mA cm-2的饱和光电流密度。与普通氢电极相比，在0.5 V下施加的双光子电流效率达到8.3％。

著录项

来源
《Advanced energy materials》 |2017年第2期|160095.21-160095.26|共6页
作者
Fan Shizhao; Shih Ishiang; Mi Zetian;
展开▼
作者单位

McGill Univ, Dept Elect & Comp Engn, 3480 Univ St, Montreal, PQ H3A 0E9, Canada;

McGill Univ, Dept Elect & Comp Engn, 3480 Univ St, Montreal, PQ H3A 0E9, Canada;

McGill Univ, Dept Elect & Comp Engn, 3480 Univ St, Montreal, PQ H3A 0E9, Canada;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词
hydrogen; InGaN nanowires; photoanodes; solar cells; tunnel junctions;

机译：氢;InGaN纳米线;光阳极;太阳能电池;隧道结;

相似文献

外文文献
专利

1. A SCAPS simulation investigation of non-toxic MAGeI_3-on-Si tandem solar device utilizing monolithically integrated (2-T) and mechanically stacked (4-T) configurations [J] . Sarker Saugata, Islam Md Tohidul, Rauf Abrar, Solar Energy . 2021,第Sepa期

机译：一种使用单片集成（2-T）和机械堆叠（4-T）配置的无毒Magei_3-on-Si串联太阳能器件的剪辑仿真研究
2. Monolithically-integrated BiVO_4/p~+-n GaAs_(1-x)P_x tandem photoanodes capable of unassisted solar water splitting [J] . Lawrence David J., Smith Brianna L., Collard Cameron D., International journal of hydrogen energy . 2021,第2期

机译：单片 - 集成的BIVO_4 / P〜+ -N GAAS_（1-x）P_X串联光电池能够进行无归档的太阳能分裂
3. A novel on-line solid-phase extraction approach integrated with a monolithic column and tandem mass spectrometry for direct plasma analysis of multiple drugs and metabolites [J] . Zang X, Luo R, Song N, Rapid Communications in Mass Spectrometry: RCM . 2005,第22期

机译：一种新颖的在线固相萃取方法，与整体柱和串联质谱联用，可直接对多种药物和代谢物进行血浆分析
4. Bandgap optimized III–V (GaAsP) nanowire on silicon tandem solar cell, device and data [C] . Holm Jeppe V., Aagesen Martin, Zhang Yunyan, IEEE Photovoltaic Specialists Conference . 2014

机译：硅串联太阳能电池，器件和数据上的带隙优化III–V（GaAsP）纳米线
5. Development of a Monolithically Integrated GaN Nanowire Memory Device [D] . Vangipuram, Vijay Gopal Thirupakuzi. 2021

机译：开发一块单片集成的GaN纳米线存储装置
6. Enhancing electron diffusion length in narrow-bandgap perovskites for efficient monolithic perovskite tandem solar cells [O] . Zhibin Yang, Zhenhua Yu, Haotong Wei, -1

机译：增加窄带隙钙钛矿中的电子扩散长度以实现高效的整体钙钛矿串联太阳能电池
7. Passivation layers for nanostructured photoanodes: ultra-thin oxides on InGaN nanowires [O] . P. Neuderth, P. Hille, J. Schörmann, 2018

机译：用于纳米结构光电的钝化层：IngaN纳米线上的超薄氧化物

A Monolithically Integrated InGaN Nanowire/Si Tandem Photoanode Approaching the Ideal Bandgap Configuration of 1.75/1.13 eV

摘要

著录项

相似文献

相关主题

期刊订阅