Solar Cells: A Temporary Barrier Effect of the Alloy Layer During Selenization: Tailoring the Thickness of MoSe2 for Efficient Cu2ZnSnSe4 Solar Cells (Adv. Energy Mater. 9/2015)

著录项

• 来源
  《Advanced energy materials》 |2015年第9期|1-1|共1页
• 作者

  Jianjun Li; Yi Zhang; Wei Zhao; Dahyun Nam; Hyeonsik Cheong; Li Wu; Zhiqiang Zhou; Yun Sun;

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• 作者单位

  Institute of Photoelectronic Thin Film Devices and Technology Nankai University Tianjin P.R. China;

  Institute of Photoelectronic Thin Film Devices and Technology Nankai University Tianjin P.R. China;

  Institute of Photoelectronic Thin Film Devices and Technology Nankai University Tianjin P.R. China;

  Department of Physics Sogang University Seoul Korea;

  Department of Physics Sogang University Seoul Korea;

  The MOE Key Laboratory of Weak-Light Nonlinear Photonics School of Physics Nankai University Tianjin P.R. China;

  Institute of Photoelectronic Thin Film Devices and Technology Nankai University Tianjin P.R. China;

  Institute of Photoelectronic Thin Film Devices and Technology Nankai University Tianjin P.R. China;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  alloys; annealing process; CZTSe; MoSe2; solar cells; series resistance;

  机译：合金;退火工艺;CZTSe;MoSe2;太阳能电池;串联电阻;