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首页> 外文期刊>Advanced Functional Materials >Exploiting In Situ Redox and Diffusion of Molybdenum to Enable Thin-Film Circuitry for Low-Cost Wireless Energy Harvesting
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Exploiting In Situ Redox and Diffusion of Molybdenum to Enable Thin-Film Circuitry for Low-Cost Wireless Energy Harvesting

机译：利用原位氧化还原和钼扩散，以实现用于低成本无线能量收集的薄膜电路

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摘要

Direct additive fabrication of thin-film electronics using a high-mobility, wide-bandgap amorphous oxide semiconductor (AOS) can pave the way for integration of efficient power circuits with digital electronics. For power rectifiers, vertical thin-film diodes (V-TFDs) offer superior efficiency and higher frequency operation compared to lateral thin-film transistors (TFTs). However, the AOS V-TFDs reported so far require additional fabrication steps and generally suffer from low voltage handling capability. Here, these challenges are overcome by exploiting in situ reactions of molybdenum (Mo) during the solution-process deposition of amorphous zinc tin oxide film. The oxidation of Mo forms the rectifying contact of the V-TFD, while the simultaneous diffusion of Mo increases the diode's voltage range of operation. The resulting V-TFDs are demonstrated in a full-wave rectifier for wireless energy harvesting from a commercial radio-frequency identification reader. Finally, by using the same Mo film for V-TFD rectifying contacts and TFT gate electrodes, this process allows simultaneous fabrication of both devices without any additional steps. The integration of TFTs alongside V-TFDs opens a new fabrication route for future low-cost and large-area thin-film circuitry with embedded power management.
机译：使用高迁移率，宽带隙非晶氧化物半导体（AOS）的薄膜电子产品的直接附加制造可以为将高效电源电路与数字电子产品集成的方式铺平道路。对于功率整流器，与横向薄膜晶体管（TFT）相比，垂直薄膜二极管（V-TFD）具有更高的效率和更高的工作频率。然而，迄今为止报道的AO​​S V-TFD需要额外的制造步骤，并且通常具有低电压处理能力。在这里，通过在非晶氧化锌锡膜的固溶过程沉积过程中利用钼（Mo）的原位反应来克服这些挑战。 Mo的氧化形成V-TFD的整流触点，而Mo的同时扩散增加了二极管的工作电压范围。在全波整流器中演示了所得的V-TFD，可从商用射频识别阅读器中收集无线能量。最后，通过对V-TFD整流触点和TFT栅电极使用相同的Mo膜，此工艺无需两个步骤即可同时制造两个器件。 TFT与V-TFD的集成为具有嵌入式电源管理的未来低成本和大面积薄膜电路开辟了一条新的制造途径。

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